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1997 Fiscal Year Final Research Report Summary

Thin-Film-Transistor and Its Layr-Structured Circuitry for Signal Prosessing Based on Probability

Research Project

Project/Area Number 08650406
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionKyusyu Institute of Technology

Principal Investigator

ASANO Tanemasa  Kyusyu Institute of Technology, Center for Microelectronic Systems, Professor, マイクロ化総合技術センター, 教授 (50126306)

Co-Investigator(Kenkyū-buntansha) TANAKA Koichiro  Kyusyu Institute of Technology, Center for Microelectronic Systems, Research Ass, マイクロ化総合技術センター, 助手 (40253570)
AOKI Satoshi  Kyusyu Institute of Technology, Center for Microelectronic Systems, Research Ass, マイクロ化総合技術センター, 助手 (40231758)
Project Period (FY) 1996 – 1997
Keywordsthin film transistor / TFT / polycrystalline silicon / solid phase crystallization / solid phase recrytallization / FPGA / FPAA / mixed signal circuit / ディジタル混在回路
Research Abstract

Thin-film-transistor tenhnology has investigated from the view points of material preparation and device structures. Thin films of polycrystaline silicon and field effect transistors have been investigated.
・In order to enhance the signal processing speed of thin-film-transistor cricuits, it is desirable to design and fabricate each transistor in a circuit in a single polycrystalline grain. In order to realize this ideal situation, it is necessary to control the position of crystal and the growth speed of the crystal grains. We have found (1) enhancement of nucleation rate of amorphous silicon, and (2) reduction of the grain growth rate by irradiation of amorphous silicon with ions of innert species. Using these phenomena, we have demonstarated the control of crystallization sites of polycrystalline silicon films.
・Thin-films transistors fabricated on the polycrystalline silicon film prepared using the above nucleation-controlled method have been verified to show about 3 times higher operation speed than those fabricated using the conventional method.
・It has been demonstrated that, using the nucleation control method, thin-film transistors can be shrinked down to 0.6 mum and circuits composed of these transistors can operate. A test oscilation circuit has been designed and fabricated, which operated at the frequency range of several MHz at supply voltage of 5 V.
Application of field programmable analog and digital ICs to implementation of pulse signal processing circuits has been investigated.
・It has been found that analog/digital mixed signal circuits can be realized by converting analog signals to digitl signals in field progarammable analog arrays (FPAAs) and jointing with field programmable gate arrays (FPGAs).
・Using FPAA and FPGA,voltage controlled oscilator, ADC,DAC,and countors has been implemented and impletation method has been established.

  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] Y.Okada, K.Aoto, T.Asano: "Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment" Ext.Abs.1996 Int.Cont.Solid State Devices and Materials. 374-376 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Asano, K.Aoto, Y.Okada: "Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching" Jpn.J.Appl.Phys.36・3B. 428-432 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Asano, J.Yasuda: "A New Self-Aligned Process for Fabrication of Microemitter Arrays using Selective Etching of Si." Dig.Papers 1996 Int.Microprocess Conf.250-251 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Asano, J.Yasuda: "A New Self-Aligned Process for Fabrication of Microemitter Arrays Using Selective Etching of Silicon" Jpn.J.Appl.Phys.35・12B. 6632-6636 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Higa, K.Nishii, and T.Asano: "Si field emitter arrays fabricated by anodization and transfer technique" Jpn.J.Appl.Phys. 36・12B. 7741-7744 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Arita, M.Akamatsu, and T.Asano: "Supressing plasma induced degradation of gate oxideusing silicon-on-insulator structures" Jpn.J.Appl./Phys.37・3B. 253-256 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Nishisaka and T.Asano: "Reduction of the floating-body effect in SOI-MOSFETs by using Schottky source/drain contacts" Jpn.J.Appl.Phys.37・3B. 248-252 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 田中 康一郎、岡田 順二、平野 孝明、浅野 種正: "再構成型集積回路によるディジタル/アナログ混在回路の試作" 第6回FPGA/PLD Design Conference予稿集. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Makihira and T.Asano: "Improving the performance of double-gate thin-film-transistors using gate offset structru" Dig.Tech.Papers 1997 Int.Workshop on Active Matrix Liquid Crystal Displays,. 191-194 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Nishisaka and T.Asano: "Reduction of the floating-body effect in SOI-MOSFETs by using Schottky source/drain contacts" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 160-161 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Arita, M.Akamatsu, and T.Asano: "Supressing plasma induced degradation of gate oxide by using silicon-on-insulator structures" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 146-147 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Asano, E.Shibata, D.Sasaguri, K.Makihira, and K.Higa: "Field emission from an ion irradiated photoresist" Jpn.J.Appl.Phys.36・6B. L818-L820 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Higa, K.nishii, and T.Asano: "Single-crystal Si field emitter fabricated by anodization" Appl.Phys.Lett.71・7. 983-985 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Asano, D.Sasaguri, E.Shibata, and K.Higa: "Ion beam modification of a photoresist and its application to field emitters" Jpn.J.Appl.Phys. 36・12B. 7749-7753 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Okadda, K.Aoto, and T.Asano: "Selective solid phase crystallization of amorphous Si by oxygen plasma treatment" Ext.Abs.1996 Int.Conf.Solid State Devices and Materials. 374-376 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Asano, K.Aoto, and T.Asano: "Enhanced solid phase crystallization of amorphousi Si by plasma treatment using reactive ion etching" Jpn.J.Appl.Phys.Vol.36, No.3B. 428-432 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Asano and J.Yasuda: "A new self-aligned process for fabrication of microemitter arrays using selestive etching of Si" Dig.Papers 1996 Int.Microprocess Conf.250-521 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Asano and J.Yasuda: "A new self-aligned process for fabrication of microemitter arrays using selestive etching of silicon" Jpn.J.Appl.Phys.Vol.35, No.12B. 6632-6636 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Makihira and T.Asano: "Improving the performance of double-gate thin-film transistors using gate offset structure" Dig.Tech.Papers 1997 Int.Workshop on Active Matrix Liquid Crystal Displays. 191-194 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Nishisaka and T.Asano: "Reduction of the floating body effect in SOI MOSFET by using Schottky source/drain cotacts" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 160-161 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Arita, M.Akamatsu, and T.Asano: "Supressing plasma induced degradation of gate oxide by using silicon-on-insulator structures" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 146-147 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Asano, E.Shibata, D.Sasaguri, K.Makihira, and K.Higa: "Field emission from an ion irradeated photoresist" Jpn.J.Appl.Phys.Vol.36, No.6B. L818-L820 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Higa, K.Nishii, and T.Asano: "Single-crystal Si field emitter fabricated by anodization" Appl.Phys.Lett.Vol.71, No.7. 983-985 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Asano, D.Sasaguri, E.Shibata, and K.Higa: "Ion beam modification of a photoresist and its application to field emitters" Jpn.J.Appl.Phys.Vol.36, No.12B. 7749-7753 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Higa, K.Nishii, and T.Asano: "Si field emitter arrays fabricated by anodization and transfer technique" Jpn.J.Appl.Phys.Vol.36, No.12B. 7741-7744 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Arita, M.Akamatsu, and T.Asano: "Supressing pasma induced degradation of gate oxide using silicon-on-insulator structures" Jpn.J.Appl.Phys.Vol.37, No.3B. 253-256 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Nishisaka and T.Asano: "Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain cotacts" Jpn.J.Appl.Phys.Vol.36, No.3B. 248-252 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Tanaka, J.Okada, T.Hirano, and T.Asano: "Implementation of degital/analog mixed signal circuits using field programmable integrated circuits" Proc.6th FPGA/PLD Design Conference. (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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