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1999 Fiscal Year Final Research Report Summary

Study on energy distribution measurement of emitted electron from resonant tunneling cathode

Research Project

Project/Area Number 09305022
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

YOKOO Kuniyoshi  Research Institute of Electrical Communication, Tohoku University, Professor, 電気通信研究所, 教授 (60005428)

Co-Investigator(Kenkyū-buntansha) MIMURA Hidenori  Research Institute of Electrical Communication, Tohoku University, Associate Professor, 電気通信研究所, 助教授 (90144055)
EGAMI Norifumi  ATR Adaptive Communications Research Laboratories, Head, 環境適応通信研究所, 室長
ISHIZUKA Hiroshi  Department of Physics, Fukuoka Institute of Technology, Professor, 工学部, 教授 (50015517)
SATO Nobuyuki  Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (10178759)
SHIMAWAKI Hidetaka  Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (80241587)
Project Period (FY) 1997 – 1999
Keywordsresonant tunneling effect / cold cathode / monochromatic energy beam / GaAs / AlAs heterostructure / quantum well / energy distribution
Research Abstract

A high current density electron beam with monochromatic energy is required for applications to high-resolution electron beam lithography, holography and electron microscopy and many vacuum microelectronic devices. A resonant tunneling electron emission passing through an energy subband in a quantum well structure is attractive to produce a monochromatic energy electron beam. We designed and fabricated GaAs/AlAs resonant tunneling cathodes with single and multi quantum wells by using molecular beam epitaxy method and photolithography techniques. Steplike or impulselike emission was observed near the gate voltage appearing the negative resistance characteristics in the diode current. The experimental results suggest that the electron emission reflects clearly the resonant effect of the electron transport in the quantum well.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] H.Mimura,H.Shimawaki,K.Yokoo: "Resonant Fowler Nordheim tunneling emission from metal-oxide-semiconductor cathodes"J.Vac.Sci.Technol.. B16(2). 803-806 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura,K.Yokoo: "Tunneling emission from valence band of Si-metal-oxide-semiconductor electron tunneling cathode"J.Vac.Sci.Technol.. B16(2). 818-821 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura,K.Yokoo: "Enhancement in electron from polycrystalline silicon field emitter arrays coated with diamond-like carbon"J.Appl.Phys.. 84. 3378-3381 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 横尾、三村: "半導体電子源の電界電子放射特性"真空. 4. 428-433 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura,K.Yokoo: "Growth of aluminum on silicon using dimethyl-ethyl amine alane"Appl.Surf.Sci.. 142. 443-446 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura,K.Yokoo: "Γ -X electron transfer in GaAs-AlAs type-I superlattices"Appl.Surf.Sci.. 142. 624-628 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Mimura, Y. Abe, J. Ikeda, K. Tahara, Y. Neo, H. Shimawaki and K. Yokoo: "Resonant Fowler Nordheim tunneling emission from metal-oxide-semiconductor cathodes"J. Vac. Sci. Technol.. B16(2). 803-806 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J. Ikeda, Y. Yamada, K. Okamoto, Y. Abe, T. Tahara, H. Mimura and K. Yokoo: "Tunneling emission from valence band of Si-metal-oxide-semiconductor electron tunneling cathode"J. Vac. Sci. Technol.. B16(2). 818-821 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Mimura, G. Hashiguchi, M. Okada, T. Matsumoto, M. Tanaka and K. Yokoo: "Enhancement in electron from polycrystallines silicon field emitter arrays coated with diamond-like carbon"J. Appl. Phys.. 84. 3378-3381 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Yokoo, J. Ikeda, K. Tahara, Y. Abe and H. Mimura: "Field Emission Characteristics of Semiconductor Cathode"Vacuum. Vol. 41 No. 4. 12-17 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Neo, M. Niwano, H. Mimura and K. Yokoo: "Growth of aluminum on silicon using dimethyl-ethyl amine alane"Appl. Surf. Sci.. 142. 443-446 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Mimura, M. Hosoda, N. Ohtani and K. Yokoo: "Γ-X electron transfer in GaAs-AlAs type-I superlattices"Appl. Surf. Sci.. 142. 624-628 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2001-10-23  

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