1997 Fiscal Year Annual Research Report

金属-半導体界面におけるショットキー理想極限の実現とその電子デバイスへの応用

Research Project

Project/Area Number	09450118
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	呉南健北海道大学, 大学院・工学研究科, 助手 (00250481) 藤倉序章北海道大学, 大学院・工学研究科, 助手 (70271640) 橋詰保北海道大学, 大学院・工学研究科, 助教授 (80149898)
Keywords	電気化学プロセス / ショットキー極限 / 金属 / 半導体界面 / インジウムリン / フェルミ準位ピンニング / パルス法
Research Abstract	金属-半導体界面研究の原点となった「ショットキーの理想理論」によれば、界面形成後の半導体バンドに対する金属のフェルミ準位位置は、金属の仕事関数と半導体の電子親和力との違いによって決定される。この理論に従う状況が実現できれば、仕事関数の異なる金属を用いることにより、半導体に対し、任意の障壁高を持つショットキー接合や理想的な電子や正孔の供給層の形成が可能となり、それが応用上半導体エレクトロニクスに与えるインパクトは極めて大きい。本研究は主要半導体材料について、電気化学的その場プロセスを用い、フェルミ準位のピンニング現象を除去した「ショットキー理想極限」を実現することを試みるとともに、それをいくつかの電子デバイスに応用することを目的とする。得られた成果を以下にまとめる。 1)Pt/InPショットキーダイオードにおいて、0.86eV以上の障壁高さが再現姓良く得られ、理想因子も1.1程度と極めて良好な値を示した。 2)Pt/InP接合界面を、容量-電圧法、ラマン分光法および光電子分光法により詳細に評価した結果、酸化層が存在せずストレスの極めて小さい界面が形成されていることが明らかとなった。 3)酸性溶液中において、n-InP表面のSTM観察条件を見いだし、金属メッキ直前の液中陽極エッチングがInP表面の酸化膜除去に有効であることを明らかにした。 4)InP系混晶半導体のInAlAsおよびInGaAsに対しても、良好なPtショットキー接合が電気化学プロセスによって実現できた。ショットキー障壁高さは、それぞれ,0.9eV,0.5eVとなり、従来の蒸着法によるショットキーダイオードの場合より、300meV以上も高い障壁高が得られた。 5)界面におけるフェルミ準位のピンニング現象が外因性の機構に起因していることを明らかにした。 6)電気化学プロセスによるPt微粒子の粒径制御を可能とし、粒径分布が均一でしかも粒径のより小さなPt微粒子構造を有するショットキー接合が、より大きな障壁高を持つという相関があることを見いだした。 7)電子ビーム露光法とパルスモード電気化学プロセスを組み合わせることにより、Pt微粒子のドットアレイの形成に成功し、最小ドット径20nmを得た。

Research Products
(31 results)

All Other

All Publications (31 results)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. (in press). (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (in press). (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124 (in press). (1998)
[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124 (in press). (1998)
[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124 (in press). (1998)
[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid Sate Electronics. 41. 1441-1450 (1998)
[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid Sate Electronics. 41. 1641-1646 (1998)
[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (in press). (1998)
[Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)
[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)
[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)
[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)
[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)
[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)
[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)
[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)
[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)
[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)
[Publications] Y.Ishikawa: "Kink defects andfermi ievel pinning on (2x4)reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. 15. 1163-1172 (1997)
[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)
[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)
[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)
[Publications] T.Sato: "Large Schottky Barrier Heights onIndium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)
[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

1997 Fiscal Year Annual Research Report

金属-半導体界面におけるショットキー理想極限の実現とその電子デバイスへの応用

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. (in press). (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (in press). (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124 (in press). (1998)

[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124 (in press). (1998)

[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124 (in press). (1998)

[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid Sate Electronics. 41. 1441-1450 (1998)

[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid Sate Electronics. 41. 1641-1646 (1998)

[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (in press). (1998)

[Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

[Publications] T.Sato: "Large Schottky Barrier Heights onIndium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)