1998 Fiscal Year Annual Research Report

金属-半導体界面におけるショットキー理想極限の実現とその電子デバイスへの応用

Research Project

Project/Area Number	09450118
Research Institution	HOKKAIDO UNIVERSITY
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	本久順一北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (60212263) 呉南健電気通信大学, 電子工学科, 助教授 (00250481) 藤倉序章北海道大学, 工学研究科, 助教授 (70271640) 橋詰保北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (80149898)
Keywords	電気化学プロセス / ショットキー極限 / 金属 / 半導体界面 / フェルミ準位ピンニング / 金属微粒子 / ショットキー障壁高
Research Abstract	本研究は主要半導体材料について、電気化学的その場プロセスを用い、フェルミ準位のピンニング現象を除去した「ショットキー理想極限」を実現することを試みるとともに、それを電子デバイスに応用することを目的とする。得られた成果を以下にまとめる。 1) 電気化学プロセスによりInP,GaAs,GaN系半導体上に形成したショットキー接合の障壁高は、金属の仕事関数に強く依存する事を見いだした。特に、Pt/n-1nP,Pt/n-GaAsショットキーダイオードにおいて、それぞれショットキー理想極限をほぼ実現する0.86eV,0.92eV以上の障壁高が再現性良く得られた。 2) XPS/AES,C-V,I-V,ラマン散乱測定により、電気化学プロセスによる金属-半導体界面には、酸化物や歪みは存在せず、また界面近傍にプロセス損傷による深い準位は存在しないことを明らかにした。 3) 詳細なAFM測定により、界面形成は、粒径数nmの超微粒子を核とし、その粒径の増大と飽和(50nm)、粒子数の増大を伴って生じることを明らかにした。また、Pt/n-InPショットキー接合に関して、微粒子の粒径分布が均一でしかも粒径のより小さな微粒子構造を有するショットキー接合が、より大きな障壁高を持つという相関があることを明らかにした。さらに、導電性プローブを有するAFMを用いたI-V測定により、単一のptドットにおいても、大きな障壁高が実現されていることを確認した。 4) 以上の結果は、電気化学プロセスにおいては、金属電極形成初期に金属が微粒子状に析出することで、ストレスの無い金属一半導体界面が形成され、しかも界面近傍にはプロセス損傷が存在しないため、界面におけるフェルミ準位のピンニングが緩和し、金属の仕事関数に強く依存した障壁高が実現されたものと解釈される。 5) 電気化学プロセスをトランジスタのゲート電極形成に適用した。従来の様な複雑なプロセスを経ずに、電子線露光による電極パターン形成と電気化学プロセスのみの単純なプロセスにより、高周波トランジスタに必須のサブミクロン寸法のマッシュルーム型ゲート電極が形成可能であることを示した。

Research Products

(38 results)

All Other

All Publications (38 results)

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335-338 (1998)
[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599-602 (1998)
[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615-618 (1998)
[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261-266 (1998)
[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 37. 1501-1507 (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584-1590 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532-1539 (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of microscopic and Macroscopic properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626-1630 (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface recombination Velocity" Japanese Journal of Applied Physics. 37. 1631-1637 (1998)
[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413-1417 (1998)
[Publications] H.okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419-1423 (1998)
[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si(100)by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159-2164 (1998)
[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110)surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387-2394 (1998)
[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38. 410-414 (1999)
[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38. 421-424 (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Strong Correlatin Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi: "X-ray Photoelectron spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP passivation Process Using a Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Films. 336. 22-25 (1998)
[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)
[Publications] N.Ono: "Study of Selective MBE Growth on Patterned(001)InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)
[Publications] C.kaneshiro: "Realization of strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)
[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)
[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electron. (in press). (1999)
[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP substrates by Pulsed Electrochemical Deposition" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon surfaces Based on ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001) GaAs surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)
[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)
[Publications] A.Hamamatsu: "A.Hamamatsu,C.Kaneshiro,H.Fujikura and H.Hasegawa, “Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCI" Journal of Electroanalytical Cheistry. (in press). (1999)

1998 Fiscal Year Annual Research Report

金属-半導体界面におけるショットキー理想極限の実現とその電子デバイスへの応用

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structures for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335-338 (1998)

[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599-602 (1998)

[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615-618 (1998)

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261-266 (1998)

[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 37. 1501-1507 (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584-1590 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532-1539 (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of microscopic and Macroscopic properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626-1630 (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface recombination Velocity" Japanese Journal of Applied Physics. 37. 1631-1637 (1998)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid State Electronics. 42. 1413-1417 (1998)

[Publications] H.okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419-1423 (1998)

[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si(100)by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159-2164 (1998)

[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110)surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387-2394 (1998)

[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38. 410-414 (1999)

[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38. 421-424 (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Strong Correlatin Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi: "X-ray Photoelectron spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP passivation Process Using a Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Films. 336. 22-25 (1998)

[Publications] H.Fujikura: "Selective MBE Growth of Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)

[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)

[Publications] N.Ono: "Study of Selective MBE Growth on Patterned(001)InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference series. (in press). (1999)

[Publications] C.kaneshiro: "Realization of strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Grown by Selective MBE" Microelectronic Engineering. (in press). (1999)

[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)

[Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electron. (in press). (1999)

[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP substrates by Pulsed Electrochemical Deposition" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon surfaces Based on ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001) GaAs surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)

[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)

[Publications] A.Hamamatsu: "A.Hamamatsu,C.Kaneshiro,H.Fujikura and H.Hasegawa, “Formation of <001>-Aligned Nano-Scale Pores on (001)n-InP Surfaces by Photoelectrochemical Anodization in HCI" Journal of Electroanalytical Cheistry. (in press). (1999)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)