1998 Fiscal Year Final Research Report Summary
Growth Kinetics of Iron Silicides in the Fe/Si Bulk Reaction Diffusion Couple and Thermo-Electric Property of FeSi_2 Formed by This Method.
| Project/Area Number |
09650722
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals
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| Research Institution | KYUSHU INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
SHIMOZAKI Toshitada KYUSHU INSTITUTE OF TECHNOLOGY,Materials science and engineering, Assistant Professor, 機器分析センター, 助教授 (00093964)
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| Project Period (FY) |
1997 – 1998
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| Keywords | IRON DI-SILICIDE / THERMO-ERECTRIC MATERIAL / REACTION DIFUSION / IF-STEEL / HIGH PURITY IRON / EFFECT OF OXYGEN / SCAVENGING EFFECT / DIFFUSION BARRIER |
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| Research Abstract |
Reaction diffusion in Fe/Si binary system has been studied by using bulk diffusion couples being consisted of 3 kinds of iron sheets, i.e., 4N-Fe, 2N-Fe and interstitial free steel(IF-steel) and a <100> oriented silicon wafer. The growth rate of diffusion layers formed in these diffusion couples considerably differ from each other. The rate of the layers formed in the IF-steel/Si couple is more than ten times faster than that in the 4N-Fe/Si diffusion couple.
The reason for the different growth rate was discussed by correlating the effect of impurity contained in these Fe sheets. A possible explanation of this growth behavior has been proposed as follows that oxygen in 4N-Fe is considered as a candidate which slows down the growth rate of iron silicides, although the evidence is not found, and Ti in 4N-Fe remove the effect of oxygen by scavenging effect so that the growth in if-steel/Si couple can be faster than 4N-Fe/Si couples.
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