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1998 Fiscal Year Final Research Report Summary

Growth Kinetics of Iron Silicides in the Fe/Si Bulk Reaction Diffusion Couple and Thermo-Electric Property of FeSi_2 Formed by This Method.

Research Project

Project/Area Number 09650722
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Physical properties of metals
Research InstitutionKYUSHU INSTITUTE OF TECHNOLOGY

Principal Investigator

SHIMOZAKI Toshitada  KYUSHU INSTITUTE OF TECHNOLOGY,Materials science and engineering, Assistant Professor, 機器分析センター, 助教授 (00093964)

Project Period (FY) 1997 – 1998
KeywordsIRON DI-SILICIDE / THERMO-ERECTRIC MATERIAL / REACTION DIFUSION / IF-STEEL / HIGH PURITY IRON / EFFECT OF OXYGEN / SCAVENGING EFFECT / DIFFUSION BARRIER
Research Abstract

Reaction diffusion in Fe/Si binary system has been studied by using bulk diffusion couples being consisted of 3 kinds of iron sheets, i.e., 4N-Fe, 2N-Fe and interstitial free steel(IF-steel) and a <100> oriented silicon wafer. The growth rate of diffusion layers formed in these diffusion couples considerably differ from each other. The rate of the layers formed in the IF-steel/Si couple is more than ten times faster than that in the 4N-Fe/Si diffusion couple.
The reason for the different growth rate was discussed by correlating the effect of impurity contained in these Fe sheets. A possible explanation of this growth behavior has been proposed as follows that oxygen in 4N-Fe is considered as a candidate which slows down the growth rate of iron silicides, although the evidence is not found, and Ti in 4N-Fe remove the effect of oxygen by scavenging effect so that the growth in if-steel/Si couple can be faster than 4N-Fe/Si couples.

  • Research Products

    (11 results)

All Other

All Publications (11 results)

  • [Publications] T.Shimozaki: "Effect of Diffusion Barrier and Impurities in Titaninm on the Growth of TiAl3 Layer" Defect and Diffusion Forum.143-147. 591-596 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shimozaki: "Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion couple" Trans.JIM.38-10. 865-870 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Okino: "Self-interstitial in Silicon" Jpn.J.Appl.Phys.36.p1-11. 6591-6594 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Okino: "Point defect generation by the oxidation of silicon surface" Proceedings of (DRIP VII),Institute of physics Conference Series Number. 160. 265-268 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 大西正己: "2元系反応拡散のける異相界面移動に関する界面反応と局所平衡" 日本金属学会誌. 62・6. 505-509 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Shimozaki: "Effect of Diffusion Barrier and Impuriries in Titanium on the Growth of TiAl_3 Layer" Defect and Diffusion Forum.vol 143-147. 591-596 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shimozaki: "Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion couple" Mater. Trans. JIM.Vol.38, No.10. 865-870 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Okino: "Self-interstitial in Silicon" Jpn.J.Appl.Phys.Vol.36 (part 1. No.11). 6591-6594 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Okino: "Point defect generation by the oxidation of silicon surface" Proceedings of the seventh International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP VII), Institute of physics Conference Series Number 160, Institute of physics Publishing, Bristol and Philadelphia. 265-268 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Onishi: "Interfacial Raction and local equilibrium during moving interface in binary reaction diffusion" J.Japan Inst.of Metal. vol62 No.6. 505-509 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Toshitada Shimozaki: "The Role of Iron on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple" Trans.JIM.(submitted). (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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