1999 Fiscal Year Final Research Report Summary
Formation of durable fullerene films by using the specially controlled plasma
| Project/Area Number |
10680452
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
プラズマ理工学
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| Research Institution | IBARAKI UNIVERSITY |
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Principal Investigator |
MASE Hiroshi IBARAKI Univ. Fuc.of Engineering, Prof., 工学部, 教授 (30007611)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Naoyuki IBARAKI Univ. Fuc.of Engineering, Assoc.Prof., 工学部, 助教授 (80225979)
IKEHATA Takashi IBARAKI Univ. Fuc.of Engineering, Prof., 工学部, 教授 (00159641)
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| Project Period (FY) |
1998 – 1999
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| Keywords | fullerenes / magnetized fullerenes / fullerene ion / ion plating / ion energy control / durable fullerene films / LD-TOFMS / fragmentation |
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| Research Abstract |
To apply the dynamics of fullerene's ion to synthesis of the durable thin film based on fullerenes, we have been investigating the fullerene plasma with a time-of-flight (TOF) instrument and a Langmuir probe. The fullerenes films are formed on the biased electrode in plasma produced by employing dc or ECR discharge. The fullerenes plasma is obtained by subliming fullerenes into the argon plasma or ECR region in higher vacuum. The fullerenes deposition films are analyzed with a laser-desorption TOF mass spectrometer (LD-TOFMS), Raman spectroscopy, XRD, and SEM. In dc plasma, the thin film formed on more negatively biased electrode is durable against the laser irradiation of LD-TGFMS. The laser energy thresholds for desorption and fragmentation shift toward higher value as the magnetic field parallel to the electrode increases. The result seems to be attributed to the relative decrement for energy of argon ion bombarding the fullerene deposited on the electrode, comparing the energy increment of CィイD3+(/)60ィエD3. In the ECR plasma, it is found that the fragment components of fullerene deposit mostly on the negatively biased electrode as the micro-wave power increases. At the same time, the positive ions of CィイD260ィエD2 and its fragment are detected with TOF instrument of our own making in ECR discharge even without argon. The result shows that the positively charged fragment ion might be rich in ECR plasma. Judging from Raman analysis, our experimental condition for hydrogen-free and unheated-substrate biased at -200 V has a possibility for fabricating DLC film from fullerenes at growth rates of approximately 3 μm/h by employing the special oven of our own making.
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