2002 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Research Project

Project/Area Number	11102005
Research Institution	The University of Tokushima
Principal Investigator	酒井士郎徳島大学, 工学部, 教授 (20135411)
Co-Investigator(Kenkyū-buntansha)	中島貞之丞徳島大学, 工学部, 講師 (20207781) 西野克志徳島大学, 工学部, 講師 (70284312) 直井美貴徳島大学, 工学部, 講師 (90253228) LIU Yuhuai S?VBL, 非常勤研究員
Keywords	InNAs / 窒化物 / ナローギャップ半導体 / MOCVD / プラズマ / ワイドギャップ半導体 / GaN / 電子物性
Research Abstract	III-V族化合物半導体の中でも、周期律表の第2行に属するN(窒素)原子と他のV族原子を同時に含む混晶半導体(以下、窒化III-V族混晶と呼ぶ)は、極めて特異な性質を持つことが示されている。本研究の目的は、窒化III-V族混晶をMOCVD法で成長すること、およびそれらの物性を評価してデバイスの高性能化に応用することである。 AlGaN/GaN系にP(リン)を添加するとGaN系結晶の転位が低減することを見いだした。断面の詳細な観察から、P原子が渦転位に選択的に取り込まれる可能性が高いことを示した。また、サファイア上に直接つけたGaNPをバッファー層として用い、その上にGaNを成長すると転位密度が大きく低減することを見いだした。その初期成長状態における結晶核の観察から、P原子はC軸方向の成長速度を遅くし、結果として横方向成長を促進して転位が低減したことが確かめられた。さらに、この転位低減効果を応用して紫外線発光素子を試作し、波長370nm以下では最も高い発光効率が得られた。 GaNP結晶及びInNAs結晶を作製して、その光学特性及び化学結合の状態をXPSで評価した。従来のIII-V族結晶では、III族原子が陽イオン、V族原子が陰イオンになることが知られていたが、窒化III-V族混晶では、窒素原子の非常に強いイオン性のためP、Asなども陽イオン的性質を示すことが実験的に示された。この結果は、疑ポテンシャル法による計算の結果と一致している。これが、窒化III-V族混晶の種種の特異が性質を引き起こしている。最後に残っていたInNSb系の結晶成長を開始した。この結晶は、全てのIII-V族結晶中で最も狭いバンドギャップを持つことが予想されている。現在、成長条件を最適化しつつ、得られた結晶の評価を進めている。

Research Products

(31 results)

All Other

All Publications (31 results)

[Publications] H.X.Wang: "Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system"J. Crystal Growth. 235. 177-182 (2002)
[Publications] H.X.Wang: "The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure"J. Cryst. Growth. 235. 173-176 (2002)
[Publications] 塩島: "金属/p-GaN電極界面の電流輸送機構の理解"応用物理. 71・3. 340-341 (2002)
[Publications] H.D.Li: "V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate"Jpn. J. Appl. Phys. Part2. 41・6B. L732-L735 (2002)
[Publications] Young-Bae Lee: "High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer"Jpn. J. Appl. Phys. Part1. 41・7A. 4450-4453 (2002)
[Publications] Young-Bae Lee: "Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer"Jpn. J. Appl. Phys. Part2. 41・10A. L1037-L1039 (2002)
[Publications] T.Wang: "1 mW AlInGaN-based untraviolet light-emitting diode with an emission wavelenght of 348 nm grown on sapphire substrate"Appl. Phys. Lett.. 81・14. 2508-2510 (2002)
[Publications] Jie Bai: "Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures"Jpn. J. Appl. Phys. Part1. 41・10. 5909-5911 (2002)
[Publications] H.D.Li: "Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys. Part2. 41・11B. L1332-L1335 (2002)
[Publications] T.Sawada: "Characterization of metal/GaN Schottky interfaces based on I-V-T characteristics"Applied Surface Science. 190. 326-329 (2002)
[Publications] Kenji Shiojima: "ICTS measurement for p-GaN Schottky contacts"Applied Surface Science. 190. 318-321 (2002)
[Publications] Katsushi Nishino: "Bulk GaN growth by direct synthesis method"Journal of Crystal Growth. 237-239. 922-925 (2002)
[Publications] Jin-Ping Ao: "Monolithic Blue LED Series Arrays for High-Voltage AC Operation"physica status solidi (a). 194・2. 376-379 (2002)
[Publications] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys. Part2. 42・3B. L270-L272 (2003)
[Publications] Hiroyuki Naoi: "Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)
[Publications] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn. J. Appl. Phys. Part1. 42・4A(4月号掲載予定). (2003)
[Publications] H.D.Li: "Interactions between inversion domains and InGaN/Gan multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)
[Publications] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)
[Publications] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn. J. Appl. Phys.. 42・4A(4月号掲載予定). (2003)
[Publications] S.Sakai: "Efficient AlGaInN-based UV-LEDs in 350-370 nm wavelength(Invited)"1st Photonic Semiconductor Industrial Technology Workshop. (2002)
[Publications] Jin-Ping Ao: "Monolithic Blue LED Series Arrays for High-Voltage AC Operation"The international workshop on Nitride Semiconductors. (2002)
[Publications] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AIN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)
[Publications] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)
[Publications] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)
[Publications] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma surface treatment"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] I.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] T.Tada: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] M.Tsukihara: "Cathodoluminescence and TEM study of GaN films grown with GaNP buffer layer by MOCVD"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)
[Publications] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

2002 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Principal Investigator

酒井 士郎 徳島大学, 工学部, 教授 (20135411)

Research Products

[Publications] H.X.Wang: "Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system"J. Crystal Growth. 235. 177-182 (2002)

[Publications] H.X.Wang: "The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure"J. Cryst. Growth. 235. 173-176 (2002)

[Publications] 塩島: "金属/p-GaN電極界面の電流輸送機構の理解"応用物理. 71・3. 340-341 (2002)

[Publications] H.D.Li: "V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate"Jpn. J. Appl. Phys. Part2. 41・6B. L732-L735 (2002)

[Publications] Young-Bae Lee: "High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer"Jpn. J. Appl. Phys. Part1. 41・7A. 4450-4453 (2002)

[Publications] Young-Bae Lee: "Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer"Jpn. J. Appl. Phys. Part2. 41・10A. L1037-L1039 (2002)

[Publications] T.Wang: "1 mW AlInGaN-based untraviolet light-emitting diode with an emission wavelenght of 348 nm grown on sapphire substrate"Appl. Phys. Lett.. 81・14. 2508-2510 (2002)

[Publications] Jie Bai: "Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures"Jpn. J. Appl. Phys. Part1. 41・10. 5909-5911 (2002)

[Publications] H.D.Li: "Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys. Part2. 41・11B. L1332-L1335 (2002)

[Publications] T.Sawada: "Characterization of metal/GaN Schottky interfaces based on I-V-T characteristics"Applied Surface Science. 190. 326-329 (2002)

[Publications] Kenji Shiojima: "ICTS measurement for p-GaN Schottky contacts"Applied Surface Science. 190. 318-321 (2002)

[Publications] Katsushi Nishino: "Bulk GaN growth by direct synthesis method"Journal of Crystal Growth. 237-239. 922-925 (2002)

[Publications] Jin-Ping Ao: "Monolithic Blue LED Series Arrays for High-Voltage AC Operation"physica status solidi (a). 194・2. 376-379 (2002)

[Publications] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn. J. Appl. Phys. Part2. 42・3B. L270-L272 (2003)

[Publications] Hiroyuki Naoi: "Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)

[Publications] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn. J. Appl. Phys. Part1. 42・4A(4月号掲載予定). (2003)

[Publications] H.D.Li: "Interactions between inversion domains and InGaN/Gan multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)

[Publications] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)

[Publications] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn. J. Appl. Phys.. 42・4A(4月号掲載予定). (2003)

[Publications] S.Sakai: "Efficient AlGaInN-based UV-LEDs in 350-370 nm wavelength(Invited)"1st Photonic Semiconductor Industrial Technology Workshop. (2002)

[Publications] Jin-Ping Ao: "Monolithic Blue LED Series Arrays for High-Voltage AC Operation"The international workshop on Nitride Semiconductors. (2002)

[Publications] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AIN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)

[Publications] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)

[Publications] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)

[Publications] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma surface treatment"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] I.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] T.Tada: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] M.Tsukihara: "Cathodoluminescence and TEM study of GaN films grown with GaNP buffer layer by MOCVD"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

[Publications] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. (発表予定). (2003)

酒井士郎徳島大学, 工学部, 教授 (20135411)