2003 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Research Project

Project/Area Number	11102005
Research Institution	TOKUSHIMA UNIVERSITY
Principal Investigator	酒井士郎徳島大学, 工学部, 教授 (20135411)
Co-Investigator(Kenkyū-buntansha)	西野克志徳島大学, 工学部, 講師 (70284312) 直井美貴徳島大学, 工学部, 助教授 (90253228)
Keywords	InNAs / 窒化物 / ナローギャップ半導体 / MOCVD / プラズマ / ワイドギャップ半導体 / GaN / 電子物性
Research Abstract	III-V族化合物半導体の中でも、周期律表の第2行に属するN(窒素)原子と他のV族原子を同時に含む混晶半導体(以下、窒化III-V族混晶と呼ぶ)は、極めて特異な性質を持つことが示されている。本研究の目的は、窒化III-V族混晶をMOCVD法で成長すること、およびそれらの物性を評価してデバイスの高性能化に応用することである。サファイアの上につけるとGaNPがひどくポーラスになり、これを旨く使ったのがGaNPエピ結晶である。GaNPバッファーを使うと10^8cm^2程度まで転位密度が低下する。これは、GaNP結晶がまばら状に付き、その間で発生する転位を減らすためと考えられている。このバッファーを用いて、従来のサファイア基板上に形成されたLEDを大幅に上回る3%(365nm),6%(370nm)の外部量子効率がえられた。これと同じ事をAlNに適用しようとすると、これがなかなかうまく行かない。これは、AlNが3次元の核発生をするためである、AlNの成長にはAlN/Alという中間層を用いて転位が低減出来る。この転位低減層を用いて波長340nmのLEDを作製した。一方、長波帯への応用の観点から、In(As,Sb)N材料を検討した。通常MOCVD成長で窒素源として使用されるNH_3は、他の原料との分解温度の違いから適当ではない。そのため、ジメチルヒドラジンを用いた成長を試み、予備実験として、GaAs基板上に立方晶GaN、InNの成長を確認した。この結果に基づき、InAsN系材料についてはInAsN/GaAs構造を用いることにより、その吸収端エネルギーがN組成増加とともに小さくなることをFTIRにより確認した。InSbN系材料については、Sb,Nの取り込まれ効率がAs,N以上に異なるため同じ条件化では難しい。

Research Products
(21 results)

All Other

All Publications (21 results)

[Publications] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn.J.Appl.Phys.Part2. 42・3B. L270-L272 (2003)
[Publications] Hiroyuki Naoi: "Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)
[Publications] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn.J.Appl.Phys.Part 1. 42・4A. 1588-1589 (2003)
[Publications] H.D.Li: "Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)
[Publications] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)
[Publications] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn.J.Appl.Phys.. 42・4A. 1514-1516 (2003)
[Publications] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AlN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)
[Publications] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)
[Publications] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)
[Publications] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"phys.stat.sol.(a). 200, No.1. 102-105 (2003)
[Publications] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma su treatment"phys.stat.sol.(a). 200, No.1. 87-90 (2003)
[Publications] L.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"phys.stat.sol.(c). 0 No.7. 2432-2435 (2003)
[Publications] Y.Naoi: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. 2077-2081 (2003)
[Publications] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. 223 (2003)
[Publications] M.Tsukihara: "The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapor deposotion"phys.stat.sol.(c). 0 No.7. 2757-2760 (2003)
[Publications] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. 487 (2003)
[Publications] R.Aleksiejunas: "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayer"APPLIEDPHYSICSLETTERS. 83, 6. 1159-11159 (2003)
[Publications] J.Vaitkus: "Semi-insulating GaN and its evaluation for particle detection"Nuclear Instruments and Methods in Physics Research Section A. 509, 1. 60-64 (2003)
[Publications] J.Vaitkus: "Space charge effects, carrier capture transient behaviour and particle detection in semi-insulating GaN"Nuclear Instruments and Methods in Physics Research Section A. 514, 1. 141-145 (2003)
[Publications] J.P.Ao: "Copper gate AlGaN/GaN HEMT with low gate leakage current"IEEE Electron Device Letters. 24, 8. 500-502 (2003)
[Publications] A.Sasakia: "Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well"Solid State Communications. 129. 31-35 (2004)

2003 Fiscal Year Annual Research Report

窒化III-V族混晶の電子物性解明と応用に関する研究

Principal Investigator

酒井 士郎 徳島大学, 工学部, 教授 (20135411)

Research Products

[Publications] Kazunori Aoyama: "A Novel Method of Building Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition"Jpn.J.Appl.Phys.Part2. 42・3B. L270-L272 (2003)

[Publications] Hiroyuki Naoi: "Growth of InAs on GaAs(1 0 0) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals"Journal of Crystal Growth. 250. 290-297 (2003)

[Publications] Jin-Ping AO: "AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers"Jpn.J.Appl.Phys.Part 1. 42・4A. 1588-1589 (2003)

[Publications] H.D.Li: "Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy"Journal of Crystal Growth. 247. 28-34 (2003)

[Publications] M.Tsukihara: "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition"Applied Physics Letter. 82・6. 919-921 (2003)

[Publications] M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn.J.Appl.Phys.. 42・4A. 1514-1516 (2003)

[Publications] K.Nishino: "Effects of Surface Nitridation of Sapphire on MOCVD-AlN"First Asia-Pacific Workshop on Widegap Semiconductors. P104. 248 (2003)

[Publications] Jin-Ping Ao: "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate"First Asia-Pacific Workshop on Widegap Semiconductors. P108. 258 (2003)

[Publications] H.X.Wang: "Effect of barrier composition symmetrization on emission mechanism of light emitting diode with single quantum well active layer"First Asia-Pacific Workshop on Widegap Semiconductors. Tdv03. 199 (2003)

[Publications] Hisao Sato: "High efficiency AlGaInN-based light-emitting diode in 360-380 nm wavelength"phys.stat.sol.(a). 200, No.1. 102-105 (2003)

[Publications] Young-Bae Lee: "High efficiency GaN light-emitting diode with high resistance p-pad region using plasma su treatment"phys.stat.sol.(a). 200, No.1. 87-90 (2003)

[Publications] L.L.Maksimov: "Cracks and dislocation structures in AlGaN systems"phys.stat.sol.(c). 0 No.7. 2432-2435 (2003)

[Publications] Y.Naoi: "Growth and evaluation of GaN with SiN interlayer by MOCVD"The Fifth International Conference on Nitride Semiconductors. 2077-2081 (2003)

[Publications] Kazunori Aoyama: "MOCVD growth of InGaN with an artificial compositional distribution"The Fifth International Conference on Nitride Semiconductors. 223 (2003)

[Publications] M.Tsukihara: "The influence of a low temperature GaNP buffer on GaN growth by metalorganic chemical vapor deposotion"phys.stat.sol.(c). 0 No.7. 2757-2760 (2003)

[Publications] M.Tsukihara: "XPS MEASUREMENT OF InNAs"The Fifth International Conference on Nitride Semiconductors. 487 (2003)

[Publications] R.Aleksiejunas: "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayer"APPLIEDPHYSICSLETTERS. 83, 6. 1159-11159 (2003)

[Publications] J.Vaitkus: "Semi-insulating GaN and its evaluation for particle detection"Nuclear Instruments and Methods in Physics Research Section A. 509, 1. 60-64 (2003)

[Publications] J.Vaitkus: "Space charge effects, carrier capture transient behaviour and particle detection in semi-insulating GaN"Nuclear Instruments and Methods in Physics Research Section A. 514, 1. 141-145 (2003)

[Publications] J.P.Ao: "Copper gate AlGaN/GaN HEMT with low gate leakage current"IEEE Electron Device Letters. 24, 8. 500-502 (2003)

[Publications] A.Sasakia: "Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well"Solid State Communications. 129. 31-35 (2004)

酒井士郎徳島大学, 工学部, 教授 (20135411)