2000 Fiscal Year Annual Research Report

第2高調波エリプソメトリを用いた半導体の2次非線形光学特性に関する研究

Research Project

Project/Area Number	11305010
Research Institution	Meiji University
Principal Investigator	伊藤良一明治大学, 理工学部, 教授 (40133102)
Co-Investigator(Kenkyū-buntansha)	三浦登明治大学, 理工学部, 講師 (10257131) 立川真樹明治大学, 理工学部, 助教授 (60201612) 崔博坤明治大学, 理工学部, 教授 (30143530) 尾鍋研太郎東京大学, 大学院・新領域創成科学研究科, 教授 (50204227) 近藤高志東京大学, 大学院・工学研究科, 助教授 (60205557)
Keywords	非線形光学 / 2次非線形光学定数 / 絶対測定 / LiNbO_3 / ZnSe / 赤外
Research Abstract	LiNbO_3とZnSeの2次非線形光学定数を1.3μm帯と1.5μm帯において絶対測定により決定した LiNbO_3は大きな非線形光学定数をもつ材料で,非線形光学素子,圧電素子,表面超音波素子などに広く使われている強誘電体結晶である.高品質の結晶が得られることから非線形光学定数の標準物質としてもしばしば用いられる.今回,コングルエントLiNbO_3の2次非線形光学定数の一つd_<33>につき,基本波波長1.313μmと1.548μmにおいて分布帰還型半導体レーザを光源として用い光第二高調波発生法によりその値を決定した.測定配置はウエッジ法で,試料入出射端面による多重反射効果を厳密に考慮した.得られた結果は d_<33>(LiNbO_3;1.313μm)=19.7pm/V,d_<33>(LiNbO_3;1.548μm)=15.1pm/V であった.なお1.313μmでの値はわれわれがすでに測定したものの確認で,1.548μmでの値が今回初めて得られたものである. 立方晶ZnSeは比較的大きなバンドギャップエネルギー2.58eV(室温)をもつ半導体で青緑色半導体レーザの材料などに使われている.透明波長域が広くかつ比較的強い光非線形光学を示す材料として有望である、.今回基本波波長1.313μmと1.533μmにおいて2次非線形光学定数d_<36>の絶対測定をはじめて行った.手法はLiNbO_3に対するものと同じである.得られた結果は d_<33>(ZnSe;1.313μm)=17.1pm/V,d_<33>(ZnSe;1.533μm)=15.3pm/V であった.これらの値はLiNbO_3のd_<33>とほとんど同じ程度で,ZnSeが有望な非線形光学材料であることを示したと考えている.

Research Products

(14 results)

All Other

All Publications (14 results)

[Publications] T.Kondo et al.: "Sublatice Reversal Epitaxy : A Novel Technique for Fabricating Domain Inverted Compound Semiconductor Structures"Sci.Tech.Advanced Materials. 1・3. 173-179 (2000)
[Publications] N.Usami et al.: "SiGe Bulk Crystal as a Lattice-Matched Substrate to GaAs for Solar Cell Applications"Appl.Phys.Lett.. 77・22. 3565-3567 (2000)
[Publications] I.Shoji et al.: "Absolute Measurement of Second-Order Nonlinear-Optical Coefficients of CsLiB_6O_<10> for Visible to Ultraviolet Second-Harmonic Wavelengths"J.Opt.Soc.Am.B,. 18. 302-307 (2001)
[Publications] I.Shoji et al.: "Optical properties and laser characteristics of highly Nd^<3+>-doped Y_3Al_5O_<12> ceramics"Appl.Phys.Lett.. 77・7. 939-941 (2000)
[Publications] M.Sato et al.: "Second-harmonic generation from GaP/AlP multilayers on GaP(111) substrates based on quasi-phase matching for the fundamental standing"Jpn.J.Appl.Phys.. 39・4B. L334-L336 (2000)
[Publications] I.Shoji et al.: "Optical properties and laser oscillations of highly neodymium-doped YAG ceramics"OSA Trends in Optics and Photonics. 34. 475-479 (2000)
[Publications] 崔博坤: "表面波で柔らかい物質を調べる"日本音響学会誌. 56・5. 445-450 (2000)
[Publications] P.-K.Choi and R.Tanimoto: "Ultrasonic relaxation study in gelatin sols and gels"Jpn.J.Appl.Phys.. 39・5B. 2898-2901 (2000)
[Publications] R.Tanaka et al.: "Fast penetration of liquid gallium in polycrystalline aluminum films"Mater.Trans.. 42・1. 138-140 (2001)
[Publications] S.Koh et al.: "Characterization of Sublattice-Reversed GaAs by Reflection High Energy Diffraction and Transmission Electron Microscopy"Physica E. 7・3-4. 876-880 (2000)
[Publications] S.Nakatani et al.: "Study of Sublattice Inversion in GaAs/Ge/GaAs(001) Crystal by X-ray Diffraction"Appl.Surf.Sci.. 159-160. 256-259 (2000)
[Publications] J.Ishi et al.: "Time-to-Space Conversion of Tbits/s Optical Pulses Using a Self-Organized Quantum-Well Material"Appl.Phys.Lett.. 77・22. 3487-3489 (2000)
[Publications] N.Miura et al.: "Blue-Emitting BaAl2S4:Eu Thin-Film Electroluminescent Devices Prepared by Two Targets Pulse Electron Beam Evaporation"IEICE Transactions on Electronics. E83-C. 1618-1621 (2000)
[Publications] N.Miura et al.: "Eu2+-doped barium thioaluminate EL devices prepared by two-target pulsed-electron-bem evaporation"Journal of the Society for Information Display. 8・3. 247-251 (2000)

2000 Fiscal Year Annual Research Report

第2高調波エリプソメトリを用いた半導体の2次非線形光学特性に関する研究

Principal Investigator

伊藤 良一 明治大学, 理工学部, 教授 (40133102)

Research Products

[Publications] T.Kondo et al.: "Sublatice Reversal Epitaxy : A Novel Technique for Fabricating Domain Inverted Compound Semiconductor Structures"Sci.Tech.Advanced Materials. 1・3. 173-179 (2000)

[Publications] N.Usami et al.: "SiGe Bulk Crystal as a Lattice-Matched Substrate to GaAs for Solar Cell Applications"Appl.Phys.Lett.. 77・22. 3565-3567 (2000)

[Publications] I.Shoji et al.: "Absolute Measurement of Second-Order Nonlinear-Optical Coefficients of CsLiB_6O_<10> for Visible to Ultraviolet Second-Harmonic Wavelengths"J.Opt.Soc.Am.B,. 18. 302-307 (2001)

[Publications] I.Shoji et al.: "Optical properties and laser characteristics of highly Nd^<3+>-doped Y_3Al_5O_<12> ceramics"Appl.Phys.Lett.. 77・7. 939-941 (2000)

[Publications] M.Sato et al.: "Second-harmonic generation from GaP/AlP multilayers on GaP(111) substrates based on quasi-phase matching for the fundamental standing"Jpn.J.Appl.Phys.. 39・4B. L334-L336 (2000)

[Publications] I.Shoji et al.: "Optical properties and laser oscillations of highly neodymium-doped YAG ceramics"OSA Trends in Optics and Photonics. 34. 475-479 (2000)

[Publications] 崔博坤: "表面波で柔らかい物質を調べる"日本音響学会誌. 56・5. 445-450 (2000)

[Publications] P.-K.Choi and R.Tanimoto: "Ultrasonic relaxation study in gelatin sols and gels"Jpn.J.Appl.Phys.. 39・5B. 2898-2901 (2000)

[Publications] R.Tanaka et al.: "Fast penetration of liquid gallium in polycrystalline aluminum films"Mater.Trans.. 42・1. 138-140 (2001)

[Publications] S.Koh et al.: "Characterization of Sublattice-Reversed GaAs by Reflection High Energy Diffraction and Transmission Electron Microscopy"Physica E. 7・3-4. 876-880 (2000)

[Publications] S.Nakatani et al.: "Study of Sublattice Inversion in GaAs/Ge/GaAs(001) Crystal by X-ray Diffraction"Appl.Surf.Sci.. 159-160. 256-259 (2000)

[Publications] J.Ishi et al.: "Time-to-Space Conversion of Tbits/s Optical Pulses Using a Self-Organized Quantum-Well Material"Appl.Phys.Lett.. 77・22. 3487-3489 (2000)

[Publications] N.Miura et al.: "Blue-Emitting BaAl2S4:Eu Thin-Film Electroluminescent Devices Prepared by Two Targets Pulse Electron Beam Evaporation"IEICE Transactions on Electronics. E83-C. 1618-1621 (2000)

[Publications] N.Miura et al.: "Eu2+-doped barium thioaluminate EL devices prepared by two-target pulsed-electron-bem evaporation"Journal of the Society for Information Display. 8・3. 247-251 (2000)

伊藤良一明治大学, 理工学部, 教授 (40133102)