| Co-Investigator(Kenkyū-buntansha) |
NAGAO Masayuki Toyohashi University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (30115612)
TAKIKAWA Hirofumi Toyohashi University of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (90226952)
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| Research Abstract |
In order to fabricate the AlN film, which exhibits high electrical insulation property with high thermal conduction and is available for of electric power device, which is available for electric power devices, new reactive vacuum arc deposition system was developed. In the shielded method (S-CAD: shielded cathodic arc deposition), we found that the transparent AlN films with different crystalline orientations could be prepared by using different substrate bias. The S-CAD was further available to prepare various droplet-free films of other nitride and oxides (AlO_2, TiN, TiO_2, CrN, ZnO, etc.). However, the S-CAD has a problem that the deposition rate decreases by 1/3 to 1/5. Then, in order to increase the deposition rate, the enhanced shielded method (ES-CAD) in which the ions behind the shield were conducted and focused to the substrate by external magnetic field, was designed and the system apparatus was fabricated. After optimizing the magnetic filed configuration and magnetic flux density, the deposition rate in ES-CAD was more than 5 times as high as that in S-CAD, and was even faster than that in the non-shielded conventional method.
The improved ES-CAD (ES-CAD) in which the superconductor shield employed was then build, in order to obtain much faster deposition rate. The ions emitted from the cathode were effectively transported to the substrate by the detoured magnetic filed due to meissner effect of the superconductor. ES-CAD had higher deposition rate than ES-CAD. Furthermore, linear and torus type magnetically filtered arc deposition (FAD) systems having droplet filtering duct, were developed. As a result, it was found that the liner-FAD was not able to filter the droplets, although the torus-FAD was able to filter the droplets sufficiently.
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