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2001 Fiscal Year Final Research Report Summary

The Surface Structure of Ferroelectric Crystal like a Ammonium Sulfate Type crystals.

Research Project

Project/Area Number 11650689
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionHokkaido University of Education

Principal Investigator

MATSUKI Kiyoshi  Hokkaido University of Education, Faculty of Education, Professor, 教育学部・函館校, 教授 (00157281)

Project Period (FY) 1999 – 2001
Keywordsferroelectrics / phase transiton / potassium tellurite / domain structure
Research Abstract

Potassium tellurite K_2TeO_3 was found a new ferroeclectics by the measurements of dielectric constants. It was found that a new ferroelectric potassium tellurite undergoes successive phase transitions. The domain structure of the single crystal of ferroelectric potassium tellurite under the polarizing microscope, was observed at room temperature. The irregular stripe pattern was observed in (ab)-plane. The a-face is covered with the scale-like patterns. Potassium tellurite shows successive phase transitions. This was a similar behavior with ammomium fluoroberyllate, (NH_4)_2BeF_4, and potassium selenate, K_2SeO_4. The transiton temperature of potassium tellurite is relatively higher than those crystals. Then we investigated to clearfy the difference in ferroelectricity between these substances by the microscopic observation under wide temperature range.
The domain movement on the surface in ammonium sulfate,(NH_4)_2SO_4, single crystal is detected with the movement of the baundary of the retardation. There is no change for the retardation in immcomensurate phase in (NH_4)_2BeF_4 and K_2SeO_4 crystals. The single crystal which were grown by the slow evaporation from an aqueous solutioon of K_2TeO_3 was found a K_2Te_2O_5・ 3H_2O by X-ray single crystal diffraction. The modification on the surface in potassium tellurite was caused by the efflorescence.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] A.Onodera: "Specific Heat Study in II-VI Semiconductor Cd_<1-x>Mn_xTe"Ferroelectric. 230. 169-174 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Matsui: "The Observation of Domain Structure in Ferroelectric K_2TeO_3"Ferroelectric. 231. 61-65 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sato: "Effect of Cu-Doping On II-VI Semiconducting ZnO"Ferroelectric. 264. 139-144 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Hagio: "Electric Ferroelectricity in ZnO"Ferroelectric. 264. 235-240 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Matsui: "Electron Spin Resonance of Fe^<3+>Ions in ZnO Single Crystal"Ferroelectric. (in press).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Onodera, C.C. Myint. Y. Kawamura, H. Sato, K. Matsuki: "Specific Heat Study in II-VI Semiconductor Cd_<1-x>Mn_xTe"Ferroelectric. Vol. 230. 169-174 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiyoshi Matsuki, Akira Onodera: "The Observation of Domain Structure in Ferroelectric K_2TeO_3"Ferroelectric. Vol. 231. 61-65 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Sato, K. Kudoh, K. Yoshio, T. Yamazaki, K. Matsuki, I. Shimono, N. Sakagami, A. Onodera: "Effect Of Cu-Doping On II-VI Semiconducting ZnO"Ferroelectric. Vol. 264. 139-444 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Hagino, K. Yoshio, T, Yamazaki, H. Satoh, K. Matsuki, A. Onodera: "Electric Ferroelectricity in ZnO"Ferroelectric. Vol. 264. 235-240 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Matsuki, J, Kimura, N. Sakagami, H. Sato, A. Onodera: "Electron Spin Resonance of Fe^<3+> Ions in ZnO Single Crystal"Ferroelectric. (in press). (2002)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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