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2003 Fiscal Year Final Research Report Summary

Development of Field Emitters with Advanced Functions and Narrow Energy Spread

Research Project

Project/Area Number 12135202
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShizuoka University (2003)
Tohoku University (2000-2002)

Principal Investigator

MIMURA Hidenori  Research Institute of Electronics, Professor, 電子工学研究所, 教授 (90144055)

Co-Investigator(Kenkyū-buntansha) EGAMI Norifumi  Japan Broadcasting Corporation, Science & Technical Research Laboratories, Senior Research Engineer, 放送技術研究所, 主任研究員
KOMINAMI Yuko  KOMINAMI,Yuko, 電子工学研究所, 助手 (60313938)
NAKANISHI Yoichiro  NAKANISHI,Yoichiro, 電子工学研究所, 教授 (00022137)
SHIMAWAKI Hidetaka  Hachinohe Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (80241587)
Project Period (FY) 2000 – 2003
KeywordsSi emitter / GaAs emitter / Diamond emitter / energy analyser / miniature x-ray tube / Smith-Purcell radation / field emitter / time resolved x-ray radiograpy
Research Abstract

(a)Emitters with advanced functions : We have successfully fabricated the GaAs field emitter with an aspect ratio larger than 10 using both dry-and wet-etching. The saturation behavior is observed in the current-voltage characteristics of the GaAs emitter, suggesting that the bunched beam generated by the Gunn effect is emitted directly from the GaAs emitter. We have fabricated the novel planar emitter using polycrystalline diamond. Uniform emission with low emission angle is observed at the low gate voltage of 15V.
(b)Emitters with narrow energy spread : We have measured energy spread of the electrons emitted from the single-tip Si field emitter using a parallel-type energy analyzer. We have also measured energy spread f the electrons emitted from the single-tip Si field emitter using a cylindrical energy analyzer, which is not affected by the emission angle. The energy distribution indicates that some trapped electrons contribute the field emission.
(C)Novels devices with field emitters : We have successfully observed Smith-Purcell radiation at an acceleration voltage of 20 kV and a beam current of 200nA in a visible-to-near infrared light region using a single tip Si field emitter. We have also developed a miniature size x-ray tube using the novel graphite emitter formed by the etching of a graphite substrate. We have demonstrated time-resolved x-ray radiography, whose time resolution is 10μsec.

  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] V.Ichizli et al.: "Field emission from porous (100) GaP with modified morphology"App.Phys.Lett.. 79. 4016-4019 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ishizuka et al.: "Laser-assisted electron emission from gated field-emitters"Nuclear Instr.Meth.Phys.Resear.A. 483. 305-309 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Shimawaki et al.: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans.Electron Devices. 49. 1665-1668 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.Minh et al.: "Carbon nanotube on a Si tip for electron field emitter"Jpn.J.Appl.Phys.. 41. L1409-L1411 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"J.Vac.Sci.Tech.B. 21. 471-473 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsumoto et al.: "Point x-ray source using graphite nanofibers and its application to x-ray radiography"Appl.Phys.Lett.. 82. 1637-1639 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Jpn.J.Appl.Phys.. 42. 4048-4050 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa et al.: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Jpn.J.Appl.Phys.. 42. 4051-4053 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Electron emission from porous silicon planar emitters"J.Vac.Sci.Tech.B. 21. 1612-1615 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Shimawaki et al.: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam"J.Vac.Sci.Tech.B. 21. 1594-1597 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.Minh et al.: "Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters"J.Vac.Sci.Tech.B. 21. 1705-1709 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Field emission from an undoped diamond particle and an undoped diamond film"New Diamond and Frontier Carbon Technology. 13. 275-284 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsumoto et al.: "Intense electron emission from graphite nanocraters and their application to time-resolved x-ray radiography"Appl.Phys.Lett.. 84. 1804-1806 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Future concept for compact FEL using a field emission micro-cathode"Nuclear Instr.Meth.Phys.Resear.A. (In press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura et al.: "Photoresponse of a p-type Si field emitter"J.Vac.Sci.Tech.B. (In press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] V.Ichizli: "Field emission from porous (100) GaP with modified morphology"App. Phys. Lett. 79. 4016-4019 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ishizuka: "Laser assisted electron emission from gated field-emitters"Nuclear Instr. Meth. Phys. Resear.. A483. 305-309 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Shimawaki: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans. Electron Devices. 49. 1665-1668 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.Minh: "Carbon nanotube on a Si tip for electron field emitter"Jpn. J. Appl. Phys.. 41. L1409-L1411 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"J. Vac. Sci. Tech.. B21. 471-473 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsumoto: "Point x-ray source using graphite nanofibers and its application to x-ray radiography"Appl. Phys. Lett.. 82. 1637-1639 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic"Jpn. J. Appl. Phys.. 42. 4048-4050 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Jpn. J. Appl. Phys.. 42. 4051-4053 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Electron emission from porous silicon planar Emitters"J. Vac. Sci. Tech.. B21. 1612-1615 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Shimawaki: "Submicron poly-Si gate Si field-emitter array for generation of a collimated electron beam"J. Vac. Sci. Tech.. B21. 1594-1597 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.Minh: "Selective growth of carbon nanotubes on Si microfabricated tips and application for electron field emitters"J. Vac. Sci. Tech.. B21. 1705-1709 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Field emission from an undoped diamond particle and an undoped diamond film"New Diamond and Frontier Carbon Technology. 13. 275-284 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsumoto: "Intense electron emission from graphite nanocraters and their application to time-resolved x-ray radiography"Appl. Phys. Lett.. 84. 1804-1806 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Future concept for compact FEL using a field emission micro-cathode"Nuclear Instr. Meth. Phys. Resear., in press. A. (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Photoresponse of a p-type Si field emitter"J. Vac. Sci. Tech., in press. B. (2004)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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