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2001 Fiscal Year Final Research Report Summary

Fabrication Technique of Single Electron Transistor using STM-CVD Method

Research Project

Project/Area Number 12650032
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionHiroshima Kokusai Gakuin University

Principal Investigator

KANAJI Ztooru  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering Professor, 工学部, 教授 (40031059)

Co-Investigator(Kenkyū-buntansha) TANAKA Makoto  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Associate Prof., 工学部, 助教授 (90227174)
SUMOMOGI Tsunetaka  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Professor, 工学部, 教授 (10136129)
ENDOH Toshiro  Hiroshima Kokusai Gakuin Univ. Faculty of Engineering, Professor, 工学部, 教授 (60069200)
MORII Takashi  Matsushita Research Institure, Staff Engineer, 主任技師
Project Period (FY) 2000 – 2001
KeywordsSingle Electron Device / Single Electron Transistor / Nano-Structure / Scanning Tunneling Microscope / Electron Beam Lithography / Chemical Vapour Depositon(CVD) / Vacuum
Research Abstract

Though the Single Electron Translator is noticed as a next generation technology of the electronic device, the practical application of the technology is not easy, because this device demonstrates the superiority in the case in which the geometry of it is smaller than about 1/100 of the conventional transistor. "STM-CVD method" of this study is one of the fabrication method of this nano-scale device. By this method, the organic metal gas is sprayed on the probe-tip of scanning tunneling microscope (STM), and the metal atomes are deposited on the sunbstrate by the effect of tunneling eiectrons forming the ultramicroelectrode. With this method, the electrode can be made using a usual metal, while the otner method are sometimes depend on the special chemical characters of the used metal.
A couple of extraction electrodes which has about 0.3 μ m gap was prepared during this study period on the idetical substrate, and it was tried to prepare the ultramicroelectrode using the STM-CVD method i … More n the gap between these extraction electrodes. As an organic metal gas, TMA (trimethyl aluminum) was purchased by the bomb, which is liquid in the ordinary temperature and normal pressure. The hydrogen gas was used as the conveying gas of TMA. The mixed gas gushes into the vacuumthrough a nozzle, and TMA is frozen on the substrate. The nozzle which has special structure was manufactured originally. A heating system was used so that the CVD gas may not adhere in valves, piping and the nozzle. In order to detoxicate the used CVD gas, the filters are installed at the exhaust ports of the vacuum pumps and the gas wasdischarged to the outdoors from the chimney safely. Few times, CVD gas was practically introduced into the vacuum chamber, and tried to form the frozen TMA film on the substrate, but it could not confirmed. It advanced foe the preliminary experiment which produced metal electrode by the STM probe, but the formation of the electrode was not confirmed.
In the stage at the end of this fiscal year, though the many experimental conditions were already prepared, however, at the same time, many other difficulties are also found. And the Single Electron Transistor is not yet ralized. Less

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 金持 徹, 森居隆史, 西浦正倫, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(1)方法と用意した装置"真空. Vol.44 No.3. 263 (2000)

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  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(2)SEMによる引き出し電極の作成"日本真空協会関西支部第2回研究例会資料. (2000)

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  • [Publications] 西浦正倫, 森居隆史, 金持 徹, 田中 誠: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(3)SEMとAFMによる基板と電極の検討"真空. Vol.44 No.3. 273 (2001)

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  • [Publications] 田中 誠, 久保隆, 森居隆史, 西浦正倫, 金持 徹: "超高真空温度可変走査型トンネル顕微鏡による超微細電極の作成(4)STM・CVD法の予備実験"第42回真空に関する連合講演諸演予稿集. 236 (2001)

    • Description
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  • [Publications] 金持 徹, 久保 隆, 田中 誠, 西浦正倫, 森居隆史: "トンネル電子ビームを利用するリソグラフィー"第43回真空に関する連合講演会話演予稿集. 134 (2002)

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  • [Publications] 金持 徹: "10nm級超微細電極作成技術の開発とその応用(1)"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.1. 11-18 (1999)

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  • [Publications] 西浦正倫, 久保 隆, 田中 誠, 森居隆史, 金持 徹: "10nm級超微細電極作成技術の開発とその応用(2)電子ビームリソグラフイによるパラジュウム電極の作成"広島国際学院大学ハイテク・リサーチ・センター研究報告. Vol.2. 13-23 (2000)

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  • [Publications] T, Kanaji. Et al: "Fabrication Technique of Single Elcctron Transistor (1) Concept and Apparatuses"SHINKUU. Vol.43 No.3. 439 (2000)

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  • [Publications] M, Nishiura. Et al: "Fabrication Technique of Single Eleectron Transistor (2) Extraction Electrode prepared by Electron-beam Lithography"SHINKUU. Vol.44 No.3. 399 (2001)

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  • [Publications] M, Nishiura. Et al: "Fabrication Technique of Single Electron Transisor (3) Studies on the Substrate and Extraction Electrode using SEM and AFM"Abstracts of 41st Japanese Vacuum cong. Oct. 343 (2000)

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  • [Publications] M, Tanaka. Et al: "Fabrication Technique of Single Electron Transisor (4) Preliminary Expcriment of STM=CVD Method"Abstracts of 42nd Japanese. Vacuum Cong. Oct.. 236 (2001)

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  • [Publications] T, Kanaji. Et al: "Lithography Using the tunneling electrons of STM"Abstracts of 43rd Japanese. Vacuum Cong. Oct.. 134 (2002)

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  • [Publications] T, Kanaji: "A Study on Fablication Technique of 10nm-class Microelectrode"Report of Hightechnology Center in Hiroshima-kokusaigakuin Univ. 11

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  • [Publications] T, Kanaji, et al: "A Study on Fablication Technique of 10nm-class Microelectrode (2) Paradium Electrode prepared by Electron Lithography"Report of Hightechnology Center in Hiroshima-kokusaigakuin Univ. 13

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Published: 2003-09-17  

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