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2002 Fiscal Year Final Research Report Summary

Microwave and mm-meter wave devices using GaAs Gunn emitters

Research Project

Project/Area Number 13450133
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTohoku University

Principal Investigator

MIMURA Hidenori  Research Institute of Electrical Communication Associate Professor, 電気通信研究所, 助教授 (90144055)

Co-Investigator(Kenkyū-buntansha) SHIMAWAKI Hidetaka  Hachinohe Institute of Technology Associate Professor, 工学部, 助教授 (80241587)
SATO Nobuyuki  Research Institute of Electrical Communication Research Associate, 電気通信研究所, 助手 (10178759)
YOKOO Kuniyoshi  Research Institute of Electrical Communication Professor, 電気通信研究所, 教授 (60005428)
Project Period (FY) 2001 – 2002
Keywordsmicrocathode / Gunn effect / modulation beam / microwave and mm-meter wave / GaAs / field emitter
Research Abstract

GaAs shows the Gunn effect, where an electric field domain is created and periodically traveled. We have studied a GaAs-based field emitter for the generation of bunched beam directly from the emitter using the Gunn effect.
l. We fabricated conventional Gunn diodes and studied the relation between the diode structures and the oscillation characteristics. The experimental results reveal that a GaAs emitter with an aspect ratio larger than 10 is necessary to get the Gunn effect in the emitter structure. Then, we have successfully fabricated the GaAs field emitter with an aspect ratio larger than 10 using both dry- and wet-etching.
2. We observed saturation behavior in the current-voltage characteristic of the GaAs emitter. This result strong suggests that the bunched beam generated by the Gunn effect is emitted from the cathode.
3. To get a direct evidence of the bunched beam, we designed and fabricated a measurement system of the bunched beam frequency.
4. We designed and fabricated the vacuum chamber that is used for the generation of mm- and sub mm-meter wave using the bunched beam and a grating.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"14th International Vacuum Microelectronics Conference. 129-130 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 長谷川英明: "GaAs電界放射陰極(III)"第63回応用物理学会学術講演会. 2. 673 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Digest of Microprocess and Nanotechnology Conference. 204-205 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 三村秀典: "半導体電子源のバンドエンジニアリング"応用物理. 71. 1391-1395 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"Journal of Vacuum Science and Technology B. 21. 471-473 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Japanese Journal of Applied Physics. 6B(印刷中). (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"14th International Vacuum Microelectronics Conference. 129-130 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "GaAs field emitter (III)"Extended Abstract of the 63rd Autumn Meeting The Japan Society of Applied Physics. 2. 673 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Digest of Microprocess and Nanotechnology Confrence. 204-205 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Semiconductor cold cathodes based on energy band engineering"Oyo Buturi. 71. 1391-1395 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mimura: "Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode"Journal of Vacuum Science and Technology B. 21. 471-473 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hasegawa: "Fabrication of a GaAs emitter with a high aspect ratio for generation of prebunched electron beam using Gunn effect"Japanese Journal of Applied Physics. 6B, in press. (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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