2003 Fiscal Year Final Research Report Summary
Control of gas phase reactions in low pressure chemical vapor deposition film formation process
| Project/Area Number |
13450329
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
反応・分離工学
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
ADACHI Motoaki Osaka Prefecture University, Research Institute for Advanced Science and Technology, Professor, 先端科学研究所, 教授 (40100177)
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| Co-Investigator(Kenkyū-buntansha) |
OKUYAMA Kikuo Hiroshima University, faculty of Engineering, 大学院・工学研究科, 教授 (00101197)
TSUKUI Shigeki Osaka Prefecture University, Research Institute for Advanced Science and Technology, Assistant Professor, 先端科学研究所, 講師 (40207353)
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| Project Period (FY) |
2001 – 2003
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| Keywords | Low pressure CVD / Thin film / Ion cluster / UV activation / Photoelectron emission / Ionization |
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| Research Abstract |
The low-pressure ionization CVD film formation process was developed. The UV/photoelectron emission and corona discharge methods were used as the ion source at low pressures. Tetraethylorthosilicate (TEOS)/O_3 LPCVD films were prepared from ionized TEOS/O_3 mixtures and their morphologies were observed to investigate effects of ionization on film formation. Following results were obtained.
(1)The cold wall type low-pressure CXTD reactor was built.
(2)For UV/photoelectron emission method, a low pressure mercury lamp and a KrF excimer laser were used as a UV source and metals films of many kinds were used as a photoelectron emitter.
(3)When a Au film was irradiated by UV rays from a low pressure mercury lamp, the photoelectron generation was most stable.
(4)When a KrF excimer laser was used as a UV source, the electrons generated with high density but the density reduced quickly with time.
(5)When TEOS/O_3 LPCVD films prepared using photoelectron emission from Au film by a low pressure mercury lamp, the film growth rates increased 20%.
(6)A sonic-jet ionizer using corona discharge was developed to feed the high density ions to low pressure chamber.
(7)The ion density produced by the sonic-jet ionizer was more than 10^<10> cm^<-3>.
(8)When TEOS/O_3 LPGVD films were prepared using the sonic-jet ionizer, the film growth rates increased 10 times and the gap filling and substrate dependence of films were, improved but the flow shape did not appear.
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