2002 Fiscal Year Final Research Report Summary
Analysis of The Initial Growth Process of Carbon Nanotubes on The Silicon Carbide Surface and Control Their Formation by The Surface Modification
| Project/Area Number |
13650028
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
NAITOH Masamichi Kyushu Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (60264131)
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| Co-Investigator(Kenkyū-buntansha) |
TOYAMA Naotake Kyushu Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10039117)
SHOJI Fumiya Kyushu Kyoritsu University, Faculty of Engineering, Professor, 工学部, 教授 (00093419)
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| Project Period (FY) |
2001 – 2002
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| Keywords | scanning tunneling microscopy / carbon nanotubes / surface modification / silicon carbide / LASER / carbon nanocaps / self-organization / 自己組織化 |
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| Research Abstract |
Silicon carbide (SiC) is a very promising material for applications to high-power and high-frequency devices because of its large breakdown field and high electron mobility. In addition, it is interesting that the energy band-gap of SiC is rather wide and shows different values depending on its own crystallographic structures: hexagonal, rhombohedral or cubic. A multilayer structure of the SiC polytypes could become a new material with controllable band-gaps. Moreover, it is expected to be a substrate for heteroepitaxial growth of group III nitrides. Kusunoki et al. have recently reported [Appl.Phys.Lett.77(2000)531] that carbon nanotubes (CNTs) are formed on a 6H-SiC(000-1) surface after annealing the substrate at 1700℃ in a vacuum furnace. There are polar surfaces corresponding to Si-terminated (0001) and C-terminated (000-1) surfaces for 6H-SiC. It is interesting to note that on a 6H-SiC(0001) surface they could not obtain CNTs but only several graphite layers. The initial process of CNT growth on the 6H-SiC(000-1) surface has not been elucidated yet. In the present study, we investigated the initial process of graphitization on the 6H-SiC(000-1) surface and found that graphite layers without grobal coincidence of their crystallographic orientations grew on the 6H-SiC(000-1) surface when annealed at temperatures higher than 1300℃. We also investigated to control the formation of CNTs on the SiC surface by surface modification. When the 6H-SiC(000-1) surface applied the laser followed by annealing at 1700℃, we cannot observe the CNTs on the surface. This result indicated that we can make CNT devices using an idea such as surface modification
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Research Products
(4 results)
