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2002 Fiscal Year Final Research Report Summary

Study on the energy distribution of semiconductor emitters

Research Project

Project/Area Number 13650366
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionHachinohe Institute of Technology

Principal Investigator

SHIMAWAKI Hidetaka  Hachinohe Institute of Technology, Department of Engineering, Associate Professor, 工学部, 助教授 (80241587)

Co-Investigator(Kenkyū-buntansha) MASUDA Yoichiro  Hachinohe Institute of Technology, Department of Engineering, Professor, 工学部, 教授 (00048175)
MIMURA Hidenori  Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (90144055)
YOKOO Kuniyoshi  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (60005428)
Project Period (FY) 2001 – 2002
Keywordssemiconductor emitter / energy distribution / field emitter / 電界電子放射
Research Abstract

Cathodes with highly efficient and stable electron emission are required for vacuum microelectronics, which develops novel flat panel displays and multi-electron beam devices etc. A field emitter fabricated semiconductor technology is one of key devices of FED applications and as expected to be an electron source of a novel electron beam apparatus. Although the energy distribution of electron from the field emitter contains information of the emission mechanism, the energy distribution has not been studied so far. We have fabricated n-type and p-type Si field-emitter arrays and measured the energy distribution of the emitters. In n-type Si emitters, the energy distributions at different gate potentials have emission thresholds about 1 eV below the Fermi energy level. In the p-type, the thresholds are about 5 eV below the Fermi level and lower with increasing the gate potentials. Peaks and some of spectral features in both type emitters shift with gate voltage.

  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] H.Shimawaki: "A Monolithic Field Emitter Array With a JFET"IEEE Thans.Electron Devices. 48・9. 1665-1668 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura: "Electron emission from porous silicon planar emitters"Tech.Digest of 15th Int.Vacuum Microelectronics Conf.. 2. PM18 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mimura: "Emission characteristics from a single diamond particle grown on a silicon tip"Tech.Digest of 15th Int.Vacuum Microelectronics Conf.. 1. OB1.10 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ishizuka: "Laser-assisted electron emission from gated field-emitters"Nucl.Instr.Meth.Phys.Res.. A483. 305-309 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 三村秀典: "結晶性ダイヤモンドからの電界電子放射"信学技報. ED2001-183. 63-70 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 宮嶋健太郎: "多孔質シリコンからの電子放射特性"第62回応用物理学会学術講演会予稿集. 2. 14a-M-1 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] V. Ichizli, H. Hartnagel, H. Mimura, H, Shimawaki and K. Yokoo: "Field emission from porous (100) GaP with modified morphology"App. Phys. Lett.. 4016. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P. Minh, L. Tuyen, T. Ono, H. Mimura, K. Yokoo and M. Esashi: "Carbon nanotube on a Si tip for electron field emitter"Jpn. J. Appl. Phys.. 41. L1409 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Ishizuka, Y. Kawamura, K. Yokoo, H. Mimura, H, Shimawaki and A. Hosono: "Laser-assisted electron emission from gated field-emitters"Nucl. Instr. Meth. Phys. Res.. A 483. 305 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Shimawaki, K. Tajima, H. Mimura and K. Yokoo: "A monolithic field emitter array with a junction field effect transistor"IEEE Trans. Electron Devices. 49. 1665 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Mimura, G. Yuan, M. Ikeda, S. Ono, M. Arai and K. Yokoo: "Emission characteristics from a single diamond particle grown on a silicon tip"Tech. Digest of 15th Int. Vac. Microelectronics Conf.. OB1.10. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Shimawaki, S. Shibuya, H. Mimura and K. Yokoo: "Si field emitter arrays with sub-micron poly-Si gate"Tech. Digest of 15th Int. Vac. Microelectronics Conf.. OB1.01. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H. Mimura, K. Miyajima and K. Yokoo: "Electron emission from porous silicon planar emitters"Tech. Digest of 15th Int. Vac. Microelectronics Conf.. PM.18.7. (2002)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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