Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applications

2005 Fiscal Year Final Research Report Summary

• Project/Area Number: 15206003
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Meijo University
• Principal Investigator: AMANO Hiroshi Meijo Univ., Materials Science and Engineering, Professor, 理工学部, 教授 (60202694)
• Co-Investigator(Kenkyū-buntansha): KAMIYAMA Satoshi Meijo Univ., Materials Science and Engineering, Associate Professor, 理工学部, 助教授 (10340291)
• Project Period (FY): 2003 – 2005
• Keywords: AlN / UV Laser Diode / UV Light Emitting_Diode / Epitaxial Lateral Overgrowth / Sapphire / UV photo Diode / High temperature MOVPE

Research Abstract

Blue, green and white light emitting diodes and violet laser diodes on sapphire substrates have been already commercialized which are based on the low temperature buffer layer technology developed by us. Applications of nitride semiconductors are not limited to visible range, but can be applied to ultraviolet range. Expected applications of solid state UV/DUV light emitters/detectors include sterilizer, DNA analyzer, laser knife, flame sensor, dermatology, molecular tweezers, weather observation, gas decomposition, photolithography, etc. Formerly, AlN was grown at or lower than 1,200□ on other materials such as sapphire or SiC. Our previous mass transport study showed that in order to achieve sufficient migration of Al precursor, AlN should be grown higher than 1,200□.
The objective of this study is as follows ;
(1)Growth of AlN substrate by sublimation
(2)Growth of AlN on sapphire by metalorganic vapor phase epitaxy (MOVPE) at high temperature, and
(3)Fabrication of high quality AlGaN-based quantum structure and UV emitting device
In 2003, custom designed MOVPE reactor which is capable of raising temperature as high as 1,800□ was installed and operated with the cooperation of Ibiden Co.,Ltd. Sublimation growth of AlN on SiC and spontaneous nucleation was performed. In 2004, world's shortest wavelength laser diode on sapphire was successfully fabricated on epitaxially lateral overgrown (ELO) low dislocation density AlGaN. High quality and thick AlN was grown on sapphire by high temperature MOVPE. In 2005, we successfully grow low dislocation density AlN on sapphire using ELO technique with a dislocation density as low as 10^7cm^<-2> or less.

Research Products

• [Journal Article] Microstructure of thick AIN grown on sapphire by high-temperature MOVPE (2006)
  • Author(s): M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica Status Solide (a) 233 Pages: 1626-1631
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Growth of high-quality AIN with high growth rate by high-temperature MOVPE (2006)
  • Author(s): N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amana, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica Status Solidi (c) 3 Pages: 1617-1619
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
  • Author(s): N.Okada, N.Fujimoto, T.Kiano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Japanese Journal of Applied physics 45、No.4a Pages: 2502-2504
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE (2006)
  • Author(s): M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica.Status Solidi (a) 233 Pages: 1626-1631
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Growth of high-quality AlN with high growth rate by high-temperature MOVPE (2006)
  • Author(s): N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Physica.Status Solidi (c) 3 Pages: 1617-1619
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
  • Author(s): N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
  • Journal Title: Japanese Journal of Applied Physics 45, No.4a Pages: 2502-2504
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Laser Diode of 350.9nm wavelength Grown on Sapphire substrate by MOVPE (2004)
  • Author(s): K.Iida, T.Kawashima, A.Miyazaki, H.Kasugai, S.Mishima, A.Honshio, Y.Miyake, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth 272 Pages: 270-273
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High-quality Al_<0.12>Ga_<0.88>N with low dislocation density grown on facet-controlled Al_<0.12>Ga_<0.88>N by MOVPE (2004)
  • Author(s): T.Kawashima, K.Iida, Y.Miyake, A.Honshio, H.Kasugai, M.Imura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth 272 Pages: 377-380
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Study on the Seeded Growth of AIN Bulk Crystals by Sublimation (2004)
  • Author(s): K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro
  • Journal Title: Japanese Journal of Applied Physics 43 Pages: 7448-7453
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Defect and stress control of AIGaN for fabrication of high performance UV light emitters (2004)
  • Author(s): H.Amano, A.Miyazaki, K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, I.Akasaki, R.Liu, A.Bell, F.A.Ponce
  • Journal Title: Physica.Status solidi (a) (a)201 Pages: 2679-2685
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Laser Diode of 350.9nm wavelength grown on sapphire substrate by MOVPE (2004)
  • Author(s): K.Iida, T.Kawashima, A.Miyazaki, H.Kasugai, S.Mishima, A.Honshio, Y.Miyake, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
  • Journal Title: Journal of Crystal Growth 272 Pages: 270-273
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Study on the Seeded Growth of AlN Bulk Crystals by Sublimation (2004)
  • Author(s): K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro
  • Journal Title: Japanese Journal of Applied Physics 43 Pages: 7448-7453
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Defect and stress control of AlGaN for fabrication of high performance UV light emitters (2004)
  • Author(s): H.Amano, A.Miyazaki, K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, I.Akasaki, R.Liu, A.Bell, F.A.Ponce
  • Journal Title: Physica.Status Solidi (a) 201 Pages: 2679-2685
  • Description: 「研究成果報告書概要(欧文)」より
• [Book] "Nitride Semiconductors", Handbook on Materials and Devices, Edited by P.Ruterana,M.Albrecht,J.Neugebauer (2003)
  • Author(s): H.Amano
  • Total Pages: 664
  • Publisher: Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim
  • Description: 「研究成果報告書概要(和文)」より
• [Patent(Industrial Property Rights)] 窒化物系化合物半導体の製造方法 (2005)
  • Inventor(s): 天野 浩
  • Industrial Property Rights Holder: 名城大学
  • Industrial Property Number: 特許 出願番号
  • Filing Date: 2005-11-14
  • Description: 「研究成果報告書概要(和文)」より