Invention of new functional devices with trap engineering of tunnel field-effect transistors

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H05526
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Mori Takahiro 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (70443041)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: トンネルトランジスタ / 等電子トラップ / 相補型集積回路 / スピン量子ビット

Outline of Final Research Achievements

This research aimed to develop tunnel field-effect transistors (TFET) as a basic element of LSIs and to invent new functional devices with utilizing isoelectronic trap (IET). As for the basic element of LSIs, we realized the operation of both N- and P-type TFETs and succeeded in operating the complementary ring oscillator circuit at world’s first. This achievement was presented in the most prestigious international conference in the semiconductor device field and gained a great response. As for the invention of new functional devices, we succeeded in operating the IET-assisted TFET as a spin qubit and achieved an operating temperature up to 10K. This is the world's highest operating temperature of electronic-device-type spin qubits. This achievement was presented at conferences and submitted in a journal.

Free Research Field

半導体集積デバイス