Development of high-mobility strained Si/SiGe/Si(110) heterostructure by suppression of dislocation generation

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04661
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: University of Yamanashi
• Principal Investigator: ARIMOTO Keisuke 山梨大学, 大学院総合研究部, 准教授 (30345699)
• Co-Investigator(Renkei-kenkyūsha): YAMANAKA Junji 山梨大学, 大学院総合研究部, 准教授 (20293441)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 歪みシリコン / 結晶欠陥 / ヘテロ構造 / MOSFET

Outline of Final Research Achievements

For realization of low-power-consumption high-performance semiconductor integrated circuits, development of high mobility material is required. The (110)-oriented Si has gained interest because high hole mobility has been demonstrated while being a cost-effective material. In order to realize even higher mobility, introduction of lattice strain is effective. To change lattice constants, introduction of crystalline defects is necessary. In this study, evolution of crystalline morphology in strained Si/SiGe/Si(110) structure was investigated. In addition, room temperature effective hole mobility as high as 480 cm2/Vs was realized.

Free Research Field

半導体物理学