Study on strain fields and surface reconstructions of GaN crystals which have microstructure in mesoscopic scale.

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04667
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Japan Women's University
• Principal Investigator: Akimoto Koichi 日本女子大学, 理学部, 教授 (40262852)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: Ｘ線回折 / 窒化ガリウム / メゾスコピック / Ｘ線トポグラフィー / 結晶欠陥 / 電子回折 / Ｘ線ＣＴＲ散乱 / 表面構造

Outline of Final Research Achievements

Gallium nitride (GaN) has attracted much attention as the materials for the power devices instead of Silicon. We have been studied the cross section of GaN epitaxial layers on GaN substrates by X-ray topography using CCD camera. At the growth interface, we found large and sudden variation of a lattice spacing. We have been studied GaN surface structures normal to the surface by X-ray crystal truncation rod (CTR) scattering. We found CTR scattering intensity of c-plane GaN depends on the crystallinity of GaN films.

Free Research Field

結晶工学