Development of X-ray detector for continuous measurement using double SOI

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K04727
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: General applied physics
• Research Institution: High Energy Accelerator Research Organization
• Principal Investigator: Miyoshi Toshinobu 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 研究機関講師 (20470015)
• Research Collaborator: ARAI Yasuo 高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (90167990)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 半導体 / SOI / X線 / 電子デバイス / CMOS

Outline of Final Research Achievements

We have developed pixel detectors including both sensor and circuit, using SOI (Silicon-on-insulator) technology which improves performance of CMOS circuit. The pixel circuit includes a preamplifier. To solve problems such as crosstalk between sensor and circuit, double SOI wafer has utilized. Top SOI layer was used as SOI-CMOS circuit and the bottom as a shield layer. The crosstalk at the preamplifier in the pixel circuit was suppressed by the middle SOI layer. The sensor has two storage capacitors in a pixel, and these can be alternately used. It helps to reduce readout dead time, and therefore the sensor can be used in various application research which requires continuous measurement.

Free Research Field

エレクトロニクス