2017 Fiscal Year Final Research Report
Independent control of phonon and electron transports based on the interface physics by using heteronanostrucutre interfaces
| Project/Area Number |
15K13276
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Nanostructural physics
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
Kikkawa Jun 独立行政法人 物質・材料研究機構, その他部局等, 研究員 (20435754)
|
|---|
| Project Period (FY) |
2015-04-01 – 2018-03-31
|
| Keywords | エピタキシー / Si / 熱電材料 / ナノドット |
|---|
| Outline of Final Research Achievements |
Our objective is enhancing electrical conductivity while reducing thermal conductivity by controlling SiGe/Si interfaces for the wavenumber conservation. First, we proposed the stacking structures of SiGe epitaxial nanodots/Si as an ideal nanostructure based on this concept. We succeeded in developing the formation method of epitaxial stacking structure of ultrasmall SiGe nanodots/Si layers using ultrathin SiO2 film technique. Next, to demonstrate the above concept, we investigated the electrical properties of SiGe/Si supperlattice. As a result, we succeeded in the electric mobility of supperlattice as high as that of epitaxial Si films. The mechanism of electric transport that causes the high electric mobility is needed to be investigated more, but we successfully obtained the results we expected.
|
| Free Research Field |
ナノ構造物理
|
