Development of spintronic materials and devices on flexible substrates

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K13948
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: Yamada Shinya 大阪大学, 基礎工学研究科, 助教 (30725049)
• Co-Investigator(Kenkyū-buntansha): 浜屋 宏平 大阪大学, 基礎工学研究科, 教授 (90401281)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: フレキシブル / 薄膜トランジスタ / ゲルマニウム / ホイスラー合金

Outline of Final Research Achievements

In this project, we have studied an innovation of flexible system-in-display devices with low power consumption. We have obtained the following results. First, we have developed a method for demonstrating pseudo-single-crystalline, i.e., large-area, (111)-oriented, and high-crystallinity Ge films below 300 C on glass and flexible substrates. Next, by developing a low-temperature fabrication process for the gate-stack structure on Ge(111), we have observed a reasonable p-channel transistor operation in pseudo-single-crystalline Ge thin film transistors on glass and flexible substrates. Finally, we have examined crystal growth of a Heusler alloy, one of candidate spintronic materials, on the pseudo-single-crystalline Ge films. From now on, we should enhance the performance of the thin-film transistors and demonstrate the high-performance spintronic devices.

Free Research Field

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