Development of monojunction Cu2O devices for water splitting devices

2017 Fiscal Year Final Research Report

• Project/Area Number: 15K14299
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Energy engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Miyajima Shinsuke 東京工業大学, 工学院, 准教授 (90422526)
• Co-Investigator(Kenkyū-buntansha): 宮崎 尚 防衛大学校(総合教育学群、人文社会科学群、応用科学群、電気情報学群及びシステム工学群), 電気情報学群, 助教 (30531991)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: Cu2O / 電気化学製膜 / 光電変換 / 水分解

Outline of Final Research Achievements

We investigated properties of Cu2O films for the development of water splitting devices with Cu2O homojunction. Although we investigated the effect of chlorine doping and deposition conditions to prepare n-type Cu2O, we could not realize clear n-type conductivity and homojunciton devices. However, we obtained big progresses in the improvement of p-type Cu2O and the device fabrication. We demonstrated that thermal annealing at 150℃ significantly improves hole mobility of electrochemically deposited p-type Cu2O. By using this p-type Cu2O, we successfully fabricated a ZnO/Cu2O heterojunction device with good long wavelength response.

Free Research Field

光電変換材料