2018 Fiscal Year Final Research Report

Magnetic proximity effect and spin-current control in graphene/magnetic oxide junctions

Research Project

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Project/Area Number	16H03875
Research Category	Grant-in-Aid for Scientific Research (B)
Allocation Type	Single-year Grants
Section	一般
Research Field	Thin film/Surface and interfacial physical properties
Research Institution	National Institutes for Quantum and Radiological Science and Technology
Principal Investigator	Sakai Seiji 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 上席研究員(定常) (10354929)
Co-Investigator(Kenkyū-buntansha)	圓谷志郎国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 主幹研究員(定常) (40549664) 李松田国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 博士研究員(任常) (90805649)
Research Collaborator	Yamauchi Yasushi
Project Period (FY)	2016-04-01 – 2019-03-31
Keywords	グラフェン / 二次元物質 / スピントロニクス / 界面 / 電子・スピン物性
Outline of Final Research Achievements	Graphene is receiving great attention as one of the most promising materials for future spintronics due to their outstanding transport properties of spin-polarized charge carriers and two-dimensionality. The key research issue in developing graphene-based spintronic devices is to realize effective injection and modulation of spin-polarized carriers in graphene. However, the graphene-based devices consisting of ferromagnetic metal electrodes studied so far revealed the low spin injection efficiency and difficulty in effective spin manipulation. We for the first time demonstrated that highly-effective spin injection can be realized by utilizing the heterostructures of graphene and half-metallic magnetic oxide (LSMO) in the study of spin-polarized metastable He atom deexcitation spectroscopy. Furthermore, we also revealed that the carrier spin polarization in graphene can be controlled by the magnetic proximity effect in the graphene/insulating magnetic oxide (YIG) heterostructure.
Free Research Field	スピントロニクス、ナノ材料工学、表面・界面物性、量子ビーム計測
Academic Significance and Societal Importance of the Research Achievements	本研究で得られたグラフェン/酸化物磁性体の磁気近接効果に関する研究成果は、グラフェンを用いた次世代スピントロニクスデバイスの実現に繋がるものであり、それによる情報デバイスの省エネ化など電子情報技術の発展に貢献することが期待できる。