Direct growth of graphene on h-BN using the Cu vapor

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K14446
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Metal making/Resorce production engineering
• Research Institution: The University of Tokyo
• Principal Investigator: Nagashio Kosuke 東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: グラフェン / 2次元材料 / ファンでアワールスヘテロ

Outline of Final Research Achievements

To open the band gap in bilayer graphene, it is important to use atomically flat substrate and to reduce the charged impurities on oxide. The key to achieve these issues is the van der Waals heterostructure formation with h-BN. However, the direct growth of graphene on h-BN is quite difficult because the catalytic reaction is not expected on the h-BN surface. In this study, we studied the graphene growth on h-BN using the catalytic reaction with Cu vapor. We tried many kinds of catalytic metals. It was quite difficult to grow graphene on h-BN. Therefore, we started to grow MoS2 with intrinsic band gap, which is one of 2D materials. We successfully grew monolayer MoS2 on SiO2/Si substrate. Moreover, we tried to fabricate the van der Waals heterostructure with h-BN. The PDMS/PMMA of small lens shape is used to pick up small 2D crystal and fabricate the heterostructure. By controlling the temperature, it was succeeded.

Free Research Field

半導体デバイス工学