Measurement of local carrier relaxation by combined AFM/STM

2017 Fiscal Year Final Research Report

• Project/Area Number: 16K17521
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Chiba University
• Principal Investigator: Inami Eiichi 千葉大学, 大学院工学研究院, 特任講師 (40420418)
• Project Period (FY): 2016-04-01 – 2018-03-31
• Keywords: 走査トンネル顕微鏡 / 原子間力顕微鏡 / 薄膜・表面界面物性

Outline of Final Research Achievements

Based on combined scanning tunneling microscopy and atomic force microscopy, we have developed time-resolved-scanning probe microscopy to measure the dynamics of local electron/hole-relaxation. The principle of our method has been verified, using semiconductor surface as the test sample. It was revealed that our system can detect the tip-sample electrostatic force modulated by the local transient electron/hole. On the other hand, the experiment on the metal surface revealed that the modulation is due to the electron/hole within the probe tip. That is, at present, our system detects the relaxation of electron/hole within the probe tip, not the sample surface.

Free Research Field

総合理工