2009 Fiscal Year Final Research Report
Research on Deep-UV Semiconductor Laser Lasing in 205～250nm Region
| Project/Area Number |
17106005
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kogakuin University |
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Principal Investigator |
KAWANISHI Hideo Kogakuin University, 工学部, 教授 (70016658)
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| Co-Investigator(Kenkyū-buntansha) |
HONDA Tooru 工学院大学, 工学部, 教授 (20251671)
SAKAMOTO Tesuo 工学院大学, 工学部, 准教授 (20313067)
HASEGAWA Fumio 工学院大学, 工学部, 教授 (70143170)
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| Project Period (FY) |
2005 – 2009
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| Keywords | 半導体レーザ / 窒化物半導体 / 深紫外域 / 量子井戸構造 / 超格子 |
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| Research Abstract |
AlGaN is becoming promising semiconductors for developing violet to deep-ultraviolet light emitting semiconductor devices. The AlGaN has a large optical gain to achieve the lasing in this spectral region, as if the AlGaN has anisotropic optical property. Then, the shortest lasing of 228.9nm was demonstrated, for the first time, at room temperature under optical pumping by our experiment. And, extremely promising result as highly doped p-type AlGaN was demonstrated by carbon-doped AlGaN grown by low-pressure metal organic vapor phase epitaxy. The maximum hall-concentration that we have achieved was 3x10^<18>[cm^<-3>].
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Research Products
(25 results)
