Creation of new electronic phase in thin film of complex iridium oxides using super lattice

2020 Fiscal Year Final Research Report

• Project/Area Number: 17K14335
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Condensed matter physics II
• Research Institution: The University of Tokyo
• Principal Investigator: Hiraoka Naoka (太田奈緒香) 東京大学, 大学院理学系研究科(理学部), 助教 (40758827)
• Project Period (FY): 2017-04-01 – 2021-03-31
• Keywords: 強相関電子系

Outline of Final Research Achievements

Ir of SrIrO3 and CaIrO3 film on SrTiO3(001) substrate was substituted by Sn to suppress band width and introduce inhomogeneity of potential. In SrIrO3, substitution yielded transition into magnetic insulator at low temperature. On the other hand, Sn substituted CaIrO3 already showed insulating behavior above magnetic transition temperature. We concluded that inhomogeneity is the direct cause of insulating behavior of Sn substituted CaIrO3 while it is not in Sn substituted SrIrO3.

Free Research Field

物性物理

Academic Significance and Societal Importance of the Research Achievements

磁性を担っている電子とディラック分散を担っている電子が共通であると知られている例は少ない。本研究では、その候補物質について、置換という摂動がどのような影響を与えるか一例を示した。電子の遍歴と局在、その制御の方法に関して、新たな知見を与えると考えられる。