Fabrication of long-wavelength light-emitting devices using semipolar InGaN

2019 Fiscal Year Final Research Report

• Project/Area Number: 17K17800
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering; Electron device/Electronic equipment
• Research Institution: Nagoya University
• Principal Investigator: Kushimoto Maki 名古屋大学, 工学研究科, 助教 (50779551)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Keywords: 発光デバイス / InGaN / 半極性

Outline of Final Research Achievements

In this study, we have investigated the improvement of the luminescence efficiency of yellow and red light-emitting devices by using semipolar GaN crystals grown on Si substrates.
The (1-101) InGaN crystals used in this study can be grown at higher temperatures due to their higher In uptake efficiency than that of the conventional (0001) InGaN crystals. In addition, (1-101)InGaN has a different relaxation mechanism than (0001)InGaN, which suppresses the defects that occur when the In content increases. By inserting an InGaN layer under the active layer, it was shown that the emission wavelength could be easily controlled by controlling the relaxation rate of the InGaN layer depending on the InGaN layer thickness rather than on the growth conditions such as TMI supply and temperature. These results indicate that the crystal quality is improved and the emission efficiency is increased.

Free Research Field

発光デバイス

Academic Significance and Societal Importance of the Research Achievements

本手法はSi基板上に選択成長した半極性面GaN結晶特有の技術で、長波長の発光層の発光強度の向上が可能である。また成長基板として安価なSi基板を用いることや、選択成長を行うことから面内で発光波長が制御可能という特長を有する。これは近年研究が推進されているマイクロLEDディスプレイへの応用が期待される多色発光が可能なLED作製技術であり、GaN系LDの長波長化の実現につながる成長技術である。