Nano-integration of Metal Nanodot Nonvolatile Memory

2009 Fiscal Year Final Research Report

• Project/Area Number: 18063002
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tohoku University
• Principal Investigator: TANAKA Tetsu Tohoku University, 大学院・医工学研究科, 教授 (40417382)
• Co-Investigator(Kenkyū-buntansha): FUKUSHIMA Takafumi 東北大学, 大学院・工学研究科, 助教 (10374969) ; PEI Yanli 東北大学, 国際高等研究教育機構, 助教 (70451622)
• Project Period (FY): 2006 – 2009
• Keywords: 半導体超微細化 / 量子ドット / 電子デバイス・集積回路 / 半導体物性 / ナノ材料

Research Abstract

In this research, SAND method was developed to form metal nanodot (MND) layer. The tungsten nanodots with high density of 1.3x10^<13>/cm^2 and small size of ~1.5nm was successfully formed. The memory transistors with MND floating gate and high-k blocking dielectric were also fabricated. The cobalt nanodots memory shows a long retention time, excellent endurance, and large memory window. A novel memory with potential-engineered dual MND layers was successfully fabricated and operated properly.

Research Products

• [Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric (2010)
  • Author(s): Y. Pei, C. Yin, T. Kojima, J. Bea, H. Kino, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: IEEE Transactions on Nanotechnology (in press)
  • Peer Reviewed
• [Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application (2010)
  • Author(s): Y. Pei, T. Kojima, T. Hiraki, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics (in print)
  • Peer Reviewed
• [Journal Article] Electrical Characterization of MOS Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride (2009)
  • Author(s): Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: ECS Trans. 18 Pages: 33-37
• [Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric (2009)
  • Author(s): Y. Pei, C. Yin, T. Kojima, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Applied Physics Letter 95 Pages: 033118
  • Peer Reviewed
• [Journal Article] MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition (2009)
  • Author(s): Y Pei, C Yin, J C Bea, H Kino, T Fukushima, T Tanaka, M Koyanagi
  • Journal Title: Semiconductor Science and Technology 24 Pages: 045022
  • Peer Reviewed
• [Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application (2009)
  • Author(s): Y. Pei, C. Yin, M. Nishijima, T. Kojima, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Applied Physics Letter 94 Pages: 063108
  • Peer Reviewed
• [Journal Article] Cell characteristics of a multiple alloy nano-dots memory structure (2009)
  • Author(s): J. Bea, Y. Song, K. Lee, G. Lee, T. Tanaka, M. Koyanagi
  • Journal Title: Semiconductor Science and Technology 24 Pages: 085013
  • Peer Reviewed
• [Journal Article] A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density (2009)
  • Author(s): Y. Song, J. Bea, K. Lee, G. Lee, T. Tanaka, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics 48 Pages: 106505
  • Peer Reviewed
• [Journal Article] Characteristics of copper spiral inductors utilizing FePtnano-dots film (2009)
  • Author(s): W. -C. Jeong, K. Kiyoyama, K. -W. Lee, A. Noriki, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics Vol.48,No.4 Pages: C157-1～C157-4
  • Peer Reviewed
• [Journal Article] "Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots (2008)
  • Author(s): Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 2680-2683
  • Peer Reviewed
• [Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride (2008)
  • Author(s): Y. Pei, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
  • Journal Title: Applied Physics Letter 93 Pages: 113115-113117
  • Peer Reviewed
• [Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy (2008)
  • Author(s): M. Murugesan, J.C. Bea, C. -K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
  • Journal Title: Journal of Applied Physics 104 Pages: 074316
  • Peer Reviewed
• [Journal Article] New Magnetic Nanodot Memory with FePt Nanodots (2007)
  • Author(s): C. Yin, M. Murugesan, J. Bea, M. Oogane, T. Fukushima, T. Tanaka, M. Miyao, S. Samukawa, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 2167-2171
  • Peer Reviewed
• [Journal Article] Effect of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor (2006)
  • Author(s): K. Oh, T. Sakaguchi, T. Fukushima, M. Koyanagi
  • Journal Title: Japanese Journal of Applied Physics Vol.45 Pages: 2965-2969
  • Peer Reviewed
• [Journal Article] Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application (2006)
  • Author(s): H. Choi, M. Park, T. Fukushima, M. Koyanagki
  • Journal Title: Japanese Journal of Applied Physics 45 Pages: 2984-2986
  • Peer Reviewed
• [Journal Article] Analysis of GOI-MOSFET with High-k Gate Dielectric and Metal Gate Fabricated by Ge Condensation Technique (2006)
  • Author(s): M. Park, J. Bea, T. Fukushima, M. Koyanagi
  • Journal Title: Surface and Interface Analysis 38,12-13 Pages: 1720-1724
  • Peer Reviewed
• [Presentation] Formation of Cobalt Nanodots Embedded in Silicon Oxide for Nonvolatile Memory Application (2010)
  • Author(s): Yanli Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: China Semiconductor Technology International Conference 2010 (CSTIC2010)
  • Place of Presentation: Shanghai, China.
  • Year and Date: 2010-03-19
• [Presentation] A study of Charge Retention Characteristics of Metal Nanodots Memory (2010)
  • Author(s): 開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 小柳光正, 田中徹
  • Organizer: 第57回応用物理学関係連合講演会2010年春季
  • Place of Presentation: 神奈川県平塚市東海大学
  • Year and Date: 2010-03-17
• [Presentation] High-Performance MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric (2009)
  • Author(s): Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: 10th Non-Volatile Memory Technology Symposium (NVMTS 2009)
  • Place of Presentation: Portland, OR, USA.
  • Year and Date: 2009-10-27
• [Presentation] メタルナノドットメモリの電荷保持特性に関する研究 (2009)
  • Author(s): 開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 田中徹, 小柳光正
  • Organizer: 第70回応用物理学関係連合講演会2009年秋季
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] High-k絶縁膜を有するタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性 (2009)
  • Author(s): 裴艶麗, 西嶋雅彦, 福島誉史, 田甲徹, 小柳光正
  • Organizer: 第69回応用物理学関係連合講演会2008年秋季
  • Place of Presentation: 中部大学
  • Year and Date: 2009-09-03
• [Presentation] Synthesis and characterization of magnetic nano-dots for on-chip inductors (2009)
  • Author(s): M. Murugesan, W. -C. Jeong, K. Kiyoyama, K. -W. Lee, J. -C. Bea, C. -K. Yin, T. Fukushima, T. Tanaka, M. Koyanagi
  • Organizer: 第56回応用物理学会学術講演会2009年春季
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-02
• [Presentation] New Magnetic Nano-Dots Nonvolatile Memory with Resonant Magnetic Tunneling Effect (2009)
  • Author(s): JiChel Bea, M. Murugesan, C. -K. Yin, H. Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: 第56回応用物理学会学術講演会2009年春季
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] A Co-Nanodots Nonvolatile Memory with High-k Blocking Oxide for Implantable Biomedical Devices (2009)
  • Author(s): C.K. Yin, Y.L. Pei, T. Kojima, T. Fukushima, M. Koyanagi, T. Tanaka
  • Organizer: 9th International Symposium on Nano-Biomedical Engineering
  • Place of Presentation: Sendai, Japan.
  • Year and Date: 2009-03-28
• [Presentation] Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride (2009)
  • Author(s): Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
  • Organizer: ISTC/CSTIC 2009
  • Place of Presentation: Shanghai, China
  • Year and Date: 2009-03-19
• [Presentation] Characteristics of Magnetic Film Inductors with FePt Nano-Dots (2008)
  • Author(s): W. -C. Jeong, K. Kiyoyama, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi
  • Organizer: The 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 2008-09-26
• [Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric (2008)
  • Author(s): Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: The 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba
  • Year and Date: 2008-09-25
• [Presentation] New Non-Volatile Memory with Magnetic Nano-Dots Floating Gate (2008)
  • Author(s): M. Koyanagi, T. Tanaka
  • Organizer: The 3rd International Symposium on Tera-bit-level Non-volatile Memories
  • Place of Presentation: Korea
  • Year and Date: 2008-08-29
• [Presentation] Characterization of Metal Nanodots Nonvolatile Memory (2008)
  • Author(s): Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: シリコン材料・デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-06-10
• [Presentation] FM/I/Nano-Dot FM構造でのスピン電子の磁気トンネル効果 (2008)
  • Author(s): 〓志哲, Murugesan Mariappan, Cheng KuanYin, 福島誉史, 田中徹, 寒川誠二, 河野省三, 佐道泰造, 宮尾正信, 名取研二, 小柳光正
  • Organizer: 第55回応用物理学関係連合講演会2008春季
  • Place of Presentation: 日本大学
  • Year and Date: 2008-03-30
• [Presentation] シリコン窒化膜中に埋め込んだタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性 (2008)
  • Author(s): 裴艶麗, 福島誉史, 田中徹, 小柳光正
  • Organizer: 第55回応用物理学関係連合講演会2008年春季
  • Place of Presentation: 日本大学
  • Year and Date: 2008-03-27
• [Presentation] Term Retention Characteristics of MOS Memory Devices with Self-Assembled Tungsten Nano-Dot Dispersed in Silicon Nitride (2008)
  • Author(s): Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
  • Organizer: MRS 2008 Spring Meeting
  • Place of Presentation: San Francisco, USA.
  • Year and Date: 2008-03-25
• [Presentation] Investigation of FePt Nano-Dots Fabricated by Self-Assembled Nano-Dot Deposition Method Using X-ray Photoelectron Spectroscopy (2007)
  • Author(s): M. Murugesan, J.C. Bea, C-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
  • Organizer: The 2007 International Conference on Solid State Device and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2007-09-21
• [Presentation] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot (2007)
  • Author(s): Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: The 2007 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan.
  • Year and Date: 2007-09-19
• [Presentation] Evaluation of FePt nano-dots by X-ray photoelectron spectroscopy (2007)
  • Author(s): M. Murugesan, J.C. Bea, C. -K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
  • Organizer: 第68回応用物理学会学術講演会2007秋
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-07
• [Presentation] 金属ナノドットフローティングゲートMOSキャパシタのメモリ特性 (2007)
  • Author(s): 裴艶麗, 福島誉史, 田中徹, 小柳光正
  • Organizer: 第68回応用物理学会学術講演会2007秋
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-06
• [Presentation] Magnetic characteristics of FePt nanodots formed by a self-assembled nanodot deposition method (2007)
  • Author(s): C.K. Yin, H. Choi, J.C. Bea, M. Murugesan, J.H. Yoo, T. Fukushima, Y. Murakami, T. Tanaka, D. Shindo, M. Miyao, M. Koyanagi
  • Organizer: NSTI Nanotech 2007 10th Annual
  • Place of Presentation: Santa Clara, USA.
  • Year and Date: 2007-03-23
• [Presentation] Fabrication of Magnetic Tunnel Junction with FePt Nanodots for Magnetic Nanodot Memory (2007)
  • Author(s): Cheng-Kuan Yin, Mariappan Murugesan, Ji-Chel Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: The 6th International Semiconductor Technology Conference (ISTC 2007) (Invited speech)
  • Place of Presentation: Shanghai, China.
  • Year and Date: 2007-03-19
• [Presentation] Fundamental Microstructure and Magnetic Properties of Self-Assembled FePt Nano-Dot Film Annealed by using Magnetic Field Annealing (2007)
  • Author(s): J.C. Bea, M. Murugesan, C. -K. Yin, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
  • Organizer: The Fifth Nanotechnology Symposium, JAPAN NANO 2007
  • Place of Presentation: Tokyo, Japan.
  • Year and Date: 2007-02-20
• [Presentation] Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method (2007)
  • Author(s): Woo-Cheol Jeong, Mungi Park, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
  • Organizer: Pusan-Tohoku "21COE" Joint Workshop on Mechanical Science based on Nanotechnology
  • Place of Presentation: Pusan, Korea.
  • Year and Date: 2007-01-08
• [Book] "次世代半導体メモリーの最新技術", 第6章:その他のメモリー最新技術 (2009)
  • Author(s): 田中徹, 裴艶麗
  • Total Pages: 286-296
  • Publisher: シーエムシー出版