Nano-structure functional devices based Ge-based channels

2009 Fiscal Year Final Research Report

• Project/Area Number: 18063005
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: The University of Tokyo
• Principal Investigator: TAKAGI Shinichi The University of Tokyo, 大学院・工学系研究科, 教授 (30372402)
• Co-Investigator(Kenkyū-buntansha): SUGAHARA Satoshi 東京工業大学, 理工学研究科附属像情報工学研究施設, 准教授 (40282842)
• Co-Investigator(Renkei-kenkyūsha): TAKENAKA Mitsuru 東京大学, 大学院・工学系研究科, 准教授 (20451792)
• Project Period (FY): 2006 – 2009
• Keywords: ゲルマニウム / MOSFET / GOI / 移動度 / 面方位 / スピン / 強磁性

Research Abstract

In order to realize high performance Ge devices, (110)-oriented Ge-On-Insulator structures have been realized and high hole mobility pMOSFETs have been fabricated on the structures. Also, the formation and the evaluation of thermal oxidation GeO2/Ge MOS structures have revealed the superior MOS interfaces with low density of interface states. In addition, high electron and hole mobility have been realized in MOSFETs using this interface. Also, the effectiveness of atomic hydrogen annealing has been demonstrated for reducing the leakage current of Ge devices.
The development of half-metal Source/Drain technologies for Ge MOSFETs using full heusler alloys has been conducted. A method of rapid thermal annealing for epitaxial Ge/ultrathin SOI/buried oxide/Si has been proposed and has realized highly-ordered Go2FeGe layers.

Research Products

• [Journal Article] 界面制御層を用いた高性能Ge MOSトランジスタ (2009)
  • Author(s): 高木信一, 山本豊二, 田岡紀之, 池田圭司
  • Journal Title: 応用物理 vol.78,no.1 Pages: 37-42
• [Journal Article] スピン機能MOSFETによる新しいエレクトロニクスの展開 (2009)
  • Author(s): 菅原聡
  • Journal Title: 応用物理 vol.78,no.3
• [Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide- Semiconductor Field-Effect Transistors (2009)
  • Author(s): K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara, S. Takagi
  • Journal Title: Jpn. J. Appl. Phys. vol.48,no.4 Pages: 04C050
• [Journal Article] Interfacial Control and Electrical Properties of Ge MOS structures (2009)
  • Author(s): S. Takagi, N. Taoka, M. Takenaka
  • Journal Title: ECS Trans. vol.19,no.2 Pages: 67-85
• [Journal Article] Ge/III-V Channel Engineering for future CMOS (2009)
  • Author(s): S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
  • Journal Title: ECS Trans. vol.19,no.5 Pages: 9-20
• [Journal Article] Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide-semiconductor Structures Fabricated by Thermal Oxidation (2009)
  • Author(s): T. Sasada, Y. Nakakita, M. Takenaka, S. Takagi
  • Journal Title: J. Appl. Phys. vol.106 Pages: 073716
• [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance (2008)
  • Author(s): S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, N. Sugiyama
  • Journal Title: IEEE Trans. Electron Devices Vol.55,No.1 Pages: 21-39
• [Journal Article] Evidence of low interface trap density in GeO2/Ge Metal-Oxide- Semiconductor structures fabricated by thermal oxidation (2008)
  • Author(s): H. Matsubara, T. Sasada, M. Takenaka, S. Takagi
  • Journal Title: Appl. Phys. Lett. Vol.93,Issue.3 Pages: 032104
• [Journal Article] Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors (2008)
  • Author(s): Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, S. Sugahara
  • Journal Title: ECS Transactions Vol.16 Pages: 945-952
• [Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method (2008)
  • Author(s): S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
  • Journal Title: Thin Solid Films Vol.517,Issue1 Pages: 178-180
• [Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy (2007)
  • Author(s): T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
  • Journal Title: Jpn. J. Appl. Phys. vol.46,no.4B Pages: 2117-2121
• [Journal Article] Mobility- Enhanced Device Technologies Using SiGe/Ge MOS Channels (2007)
  • Author(s): S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara, N. Sugiyama
  • Journal Title: ECS Trans. Vol.11,No.6 Pages: 61-74
• [Journal Article] Gate Dielectric Formation and MIS Interface Characterization on Ge (2007)
  • Author(s): S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
  • Journal Title: Microelectronic Engineering vol.84,Issue9-10 Pages: 2314-2319
• [Presentation] High Performance GeO2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping (2009)
  • Author(s): K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, S. Takagi
  • Organizer: International Electron Device Meeting
  • Place of Presentation: Baltimore, USA
  • Year and Date: 20091207-20091209
• [Presentation] Impact of plasma nitridation of thermally-grown GeO2/Ge MIS structures on the GeO2 film and interface properties (2009)
  • Author(s): T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
  • Organizer: 40th IEEE Semiconductor Interface Specialists Conference
  • Place of Presentation: Washington D.C., USA
  • Year and Date: 20091203-20091205
• [Presentation] New channel material MOSFETs on Si platform(invited) (2009)
  • Author(s): S. Takagi
  • Organizer: International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo Institute of Technology, Japan
  • Year and Date: 20091013-20091014
• [Presentation] Spin-functional MOSFETs (invited) (2009)
  • Author(s): S. Sugahara
  • Organizer: International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo Institute of Technology, Japan
  • Year and Date: 20091013-20091014
• [Presentation] High Performance Ge MOS Device Technologies (invited) (2009)
  • Author(s): S. Takagi
  • Organizer: 1st International Workshop on Si based nano-electronics and -photonics (SiNEP-09)
  • Place of Presentation: Vigo, Spain
  • Year and Date: 20090920-20090923
• [Presentation] High Mobility Channel CMOS Technologies for Realizing High Performance LSI's (invited) (2009)
  • Author(s): S. Takagi
  • Organizer: 2009 Custom Integrated Circuits Conference (CICC)
  • Place of Presentation: San Jose, California
  • Year and Date: 20090913-20090916
• [Presentation] Spin-Transistor Electronics with Spin-MOSFETs (invited) (2009)
  • Author(s): Satoshi Sugahara
  • Organizer: Symposium: Integration of Metallic and Semiconductor Systems in Spin Electronics, The 32nd Annual Conference on Magnetics in Japan
  • Place of Presentation: Tagajo, Japan
  • Year and Date: 20090912-20080915
• [Presentation] スピントランジスタによる新しいエレクトロニクスの展開(invited) (2009)
  • Author(s): 菅原聡
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会(SDM)
  • Place of Presentation: 大岡山, 東京
  • Year and Date: 20090716-20090717
• [Presentation] Gas phase doping of arsenic into germanium by using MOVPE system for source/drain formation of high performance Ge nMOSFETs (2009)
  • Author(s): M. Takenaka, M. Sugiyama, Y. Nakano, S. Takagi
  • Organizer: Symposium I: Silicon and Germanium issues for future CMOS devices, E-MRS 2009
  • Place of Presentation: Strasbourg (France)
  • Year and Date: 20090608-20090612
• [Presentation] Interfacial Control and Electrical Properties of Ge MOS structures (invited) (2009)
  • Author(s): S. Takagi, N. Taoka, M. Takenaka
  • Organizer: 10th International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics, 215 th Meeting of The Electrochemical Society
  • Place of Presentation: San Francisco, USA
  • Year and Date: 20090524-20090529
• [Presentation] Ge/III-V Channel Engineering for future CMOS (invited) (2009)
  • Author(s): S. Takagi, M. Sugiyama, T. Yasuda, M. Takenaka
  • Organizer: 1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215 th Meeting of The Electrochemical Society
  • Place of Presentation: San Francisco, USA
  • Year and Date: 20090524-20090529
• [Presentation] SOI-Based Spin- Transistor Technologies (invited) (2009)
  • Author(s): S. Sugahara, Y. Takamura
  • Organizer: 215th ECS Meeting
  • Place of Presentation: San Francisco, USA
  • Year and Date: 20090524-20090529
• [Presentation] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique (2009)
  • Author(s): S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: SSDM
  • Year and Date: 20090000
• [Presentation] スピン機能MOSFETとその集積回路応用(invited) (2009)
  • Author(s): 菅原聡
  • Organizer: 日本磁気学会第168回研究会第26回スピンエレクトロニクス専門研究会
  • Place of Presentation: 仙台, 宮城
  • Year and Date: 2009-11-02
• [Presentation] Ge/III-V Channel CMOS Technologies on Si platform (invited) (2009)
  • Author(s): S. Takagi
  • Organizer: First Korea-Japan Nano Forum, NANO KOREA 2009
  • Year and Date: 2009-08-28
• [Presentation] スピン機能MOSFETによる新しいエレクトロニクスの展開(invited) (2009)
  • Author(s): 菅原聡
  • Organizer: 応用物理学会シリコンテクノロジー分科会第111回研究集会
  • Place of Presentation: 大岡山, 東京
  • Year and Date: 2009-03-16
• [Presentation] Interface-controlled Self-Align Source/Drain Ge pMOSFETs Using Thermally-Oxidized GeO2 Interfacial Layers (2008)
  • Author(s): Yosuke Nakakita, Ryosho Nakane, Takashi Sasada, Hiroshi Matsubara, M. Takenaka, S. Takagi
  • Organizer: International Electron Device Meeting
  • Place of Presentation: San Fracisco, USA
  • Year and Date: 20081215-20081217
• [Presentation] Surface Orientation Dependence of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation (2008)
  • Author(s): Takashi Sasada, Yosuke Nakakita, Mitsuru Takenaka, Shinichi Takagi
  • Organizer: 39th IEEE Semiconductor Interface Specialists Conference
  • Place of Presentation: San Diego, USA
  • Year and Date: 20081211-20081213
• [Presentation] Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors (2008)
  • Author(s): Yota Takamura, Yohei Nagahama, Akira Nishijima, R. Nakane, S. Sugahara
  • Organizer: Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)
  • Place of Presentation: Honolulu, USA
  • Year and Date: 20081012-20081017
• [Presentation] Improvement of Interface Properties of GeO2/Ge MOS Structures Fabricated by Thermal Oxidation (2008)
  • Author(s): T. Sasada, H. Matsubara, M. Takenaka, S. Takagi
  • Organizer: 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20080923-20080926
• [Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs (2008)
  • Author(s): Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe, Ryosho Nakane, Mitsuru Takenaka, Satoshi Sugahara, Shinichi Takagi
  • Organizer: 2008 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20080923-20080926
• [Presentation] Understanding and Engineering of Carrier Transport in Advanced MOS Channels (plenary) (2008)
  • Author(s): S. Takagi
  • Organizer: 2008 International Conference on Simulation of Semiconductor Processes and Devices
  • Place of Presentation: Hakone, Japan
  • Year and Date: 20080909-20080911
• [Presentation] Electrical Characteristics of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method (2008)
  • Author(s): Sanjeewa Dissanayake, Yusuke Shuto, Satoshi Sugahara, Mitsuru Takenaka, Shinichi Takagi
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 於中部大学
  • Year and Date: 20080902-20080905
• [Presentation] 新チャネル材料を使った高電流駆動力CMOSデバイス技術(招待講演) (2008)
  • Author(s): 高木信一
  • Organizer: 第72回半導体集積回路技術シンポジウム
  • Place of Presentation: 於東京農工大学
  • Year and Date: 20080700
• [Presentation] [チュートリアル講演]高性能CMOSのための高移動度チャネル技術の現状と展望 (2008)
  • Author(s): 高木信一
  • Organizer: 電子情報通信学会シリコン材料・デバイス(SDM)研究会
  • Place of Presentation: 於東京大学
  • Year and Date: 20080600
• [Presentation] 先端CMOSのためのデバイス性能向上技術(招待講演) (2008)
  • Author(s): 高木信一
  • Organizer: SEMI Forum Japan 2008
  • Place of Presentation: 於大阪国際会議場
  • Year and Date: 20080600
• [Presentation] Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels (invited) (2008)
  • Author(s): Shinichi Takagi
  • Organizer: 2008 International Symposium on VLSI Technology, Systems, and Applications
  • Place of Presentation: Hsinchu, Taiwan
  • Year and Date: 20080421-20080423
• [Presentation] Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs (2008)
  • Author(s): Yota Takamura, Akira Nishijima, Yohei Nagahama, Ryosho Nakane, Satoshi Sugahara
  • Organizer: 4th Intl. Nanotechnology Conf. on Communication and Cooperation
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20080414-20080417
• [Presentation] スピンMOSFETとその高機能ロジックへの応用 (2008)
  • Author(s): 菅原聡
  • Organizer: STRJワークショップ2007
  • Place of Presentation: 東京
  • Year and Date: 20080306-20080307
• [Presentation] RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造 (2008)
  • Author(s): 高村陽太, 長浜陽平, 西島輝, 中根了昌, 宗片比呂夫, 菅原聡
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 於日本大学
  • Year and Date: 20080300
• [Presentation] Devices for high performance CMOS (invited) (2008)
  • Author(s): S. Takagi
  • Organizer: Workshop on Germanium and III-V MOS Technology, 38th European Solid-State Device Research Conference
  • Place of Presentation: Edinburgh, UK
  • Year and Date: 2008-09-19
• [Presentation] High mobility channel MOSFET (invited) (2008)
  • Author(s): S. Takagi
  • Organizer: ESSDERC Tutorials "T1: CMOS at the bleeding edge", 38th European Solid-State Device Research Conference
  • Place of Presentation: Edinburgh, UK
  • Year and Date: 2008-09-15
• [Presentation] スピン機能MOSFETとその高機能ロジックへの展開-電荷とスピンの融合による新しい高性能・高機能集積回路技術- (2008)
  • Author(s): 菅原聡
  • Organizer: JST Innovation Bridge
  • Place of Presentation: 東京
  • Year and Date: 2008-03-10
• [Presentation] Rapid thermal annealingを用いたフルホイスラー合金の作製と評価 (2007)
  • Author(s): 高村陽太, 西島輝, 長浜陽平, 中根了昌, 宗片比呂夫, 菅原聡
  • Organizer: 第12回「半導体スピン工学の基礎と応用」研究会
  • Place of Presentation: 吹田
  • Year and Date: 20071220-20071221
• [Presentation] Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs (2007)
  • Author(s): O. Weber, T. Irisawa, T. Numata, M. Harada, N. Taoka, Y. Yamashita, T. Yamamoto, N. Sugiyama, M. Takenaka, S. Takagi
  • Organizer: International Electron Device Meeting
  • Place of Presentation: Washington DC., USA
  • Year and Date: 20071200
• [Presentation] High Performance CMOS Device Technologies using New Channel Materials (invited) (2007)
  • Author(s): S. Takagi
  • Organizer: International Workshop on Advanced Silicon-based Nano-devices
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20071100
• [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method (2007)
  • Author(s): S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20071100
• [Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation (2007)
  • Author(s): S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara, M. Takenaka
  • Organizer: 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20071100
• [Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs (2007)
  • Author(s): S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka, S. Sugahara
  • Organizer: 34th International Symposium on Compound Semiconductors
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 20071000
• [Presentation] Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method (2007)
  • Author(s): H. Matsubara, H. Kumagai, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: Ext. Abs. SSDM
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20070900
• [Presentation] (110) surface Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method (2007)
  • Author(s): S. Dissanayake, H. Kumagai, Y. Shuto, S. Sugahara, S. Takagi
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 於北海道工業大学
  • Year and Date: 20070900
• [Presentation] Effects of Annealing on (110) GOI Layers Fabricated by Ge Condensation Method (2007)
  • Author(s): S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 於北海道工業大学
  • Year and Date: 20070900
• [Presentation] Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価 (2007)
  • Author(s): 高村陽太, 西島輝, 中根了昌, 宗片比呂夫, 菅原聡
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 於北海道工業大学
  • Year and Date: 20070900
• [Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structure and Application to pMOSFET Devices (2007)
  • Author(s): S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: 2nd International Conference on Industrial and Information Systems (ICIIS 2007)
  • Place of Presentation: Sri Lanka
  • Year and Date: 20070800
• [Presentation] Mobility-Enhanced MOS Device Technologies in Nano-CMOS era (plenary talk) (2007)
  • Author(s): S. Takagi
  • Organizer: Device Research Conference (DRC)
  • Place of Presentation: South Bend, USA
  • Year and Date: 20070600
• [Presentation] Gate Dielectric Formation and MIS Interface Characterization on Ge (invited) (2007)
  • Author(s): S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
  • Organizer: 15th Insulatring Films on Semiconductors (INFOS2007)
  • Place of Presentation: Athens, Greece
  • Year and Date: 20070600
• [Presentation] (110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method (2007)
  • Author(s): S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara, S. Takagi
  • Organizer: 5th International Conference on SiGe(C) Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
  • Year and Date: 20070500
• [Presentation] Advanced CMOS technologies using high mobility channels based on column-IV materials (invited) (2007)
  • Author(s): S. Takagi, T. Irisawa, T. Tezuka, T. Numata, N. Hirashita, K. Usuda, N. Sugiyama
  • Organizer: 5th International Conference on SiGe(C) Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
  • Year and Date: 20070500
• [Presentation] Mobility-Enhanced CMOS Technology (invited) (2007)
  • Author(s): S. Takagi
  • Organizer: SEMICON KOREA Semi Technology Symposium (STS) 2007
  • Place of Presentation: Souel, Korea(invited)
  • Year and Date: 20070200
• [Presentation] ナノCMOS時代のデバイス高性能化技術(High Performance Device Technologies in Nano CMOS Era) (2007)
  • Author(s): 高木信一
  • Organizer: 東京大学21世紀COEプログラム「未来社会を担うエレクトロニクスの展開」最終シンポジウム「豊かな社会を築くセキュアライフ・エレクトロニクス」
  • Place of Presentation: 東京大学本郷キャンパス・工学部2号館1階213大講堂
  • Year and Date: 20070115-20070116
• [Presentation] High Performance CMOS Device Technologies in Nano CMOS Era (invited) (2006)
  • Author(s): S. Takagi
  • Organizer: IEEE Nanotechnology Materials and Devices Conference (NMDC)
  • Place of Presentation: Gyeongju, Korea
  • Year and Date: 20061022-20061025
• [Presentation] Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels (invited) (2006)
  • Author(s): S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, K. Ikeda, N. Taoka, Y. Yamashita, M. Harada, T. Maeda, T. Yamamoto, N. Sugiyama
  • Organizer: 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Year and Date: 20061002-20061003
• [Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structures (2006)
  • Author(s): Sanjeewa Dissanayake, 熊谷寛, 菅原聡, 高木信一
  • Organizer: 2006秋応物第67回応用物理学会学術講演会
  • Place of Presentation: 於立命館大学
  • Year and Date: 20060800
• [Presentation] Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth (2006)
  • Author(s): T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
  • Organizer: Ext. Abs. SSDM
  • Year and Date: 20060000
• [Presentation] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge (2006)
  • Author(s): H. Kumagai, M. Shichijo, H. Ishikawa, T. Hoshii, S. Sugahara, Y. Uchida, S. Takagi
  • Organizer: Ext. Abs. SSDM
  • Year and Date: 20060000
• [Presentation] Prospects and Critical Issues on Ge MOS Technologies (invited) (2006)
  • Author(s): S. Takagi, N. Taoka, S. Nakaharai, K. Ikeda, T. Tezuka, Y. Yamashita, Y. Moriyama, T. Maeda, N. Sugiyama
  • Organizer: SiGe & Ge: Materials, Processing, and Devices Symposium, the 2006 Joint International Electrochemical Society Meeting
  • Place of Presentation: Moon Palace Resort, Cancun, Mexico(invited)
  • Year and Date: 2006-10-29
• [Presentation] 高性能LSIのための新構造CMOSデバイス技術 (2006)
  • Author(s): 高木信一
  • Organizer: ISTF(Industry Strategy and Technology Forum)2006
  • Place of Presentation: パシフィコ横浜
  • Year and Date: 2006-10-11
• [Presentation] Metal Source/Drain Ge MOSFET Technologies (invited) (2006)
  • Author(s): S. Takagi, K. Ikeda, T. Maeda, S. Nakaharai, N. Sugiyama, T. Uehara, S. Sugahara
  • Organizer: Workshop on Gate Stack and Contact Engineering for sub-30nm FETs
  • Place of Presentation: Monterey Plaza Hotel, Monterey CA, USA
  • Year and Date: 2006-09-05
• [Presentation] Electrical Properties of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique
  • Author(s): S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
  • Organizer: 2008年秋季応用物理学会