2009 Fiscal Year Final Research Report
Nano MOSFET Fluctuations and Device Integrity
| Project/Area Number |
18063006
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HIRAMOTO Toshiro The University of Tokyo, 生産技術研究所, 教授 (20192718)
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| Co-Investigator(Renkei-kenkyūsha) |
SARAYA Takuya 東京大学, 生産技術研究所, 助手 (90334367)
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| Project Period (FY) |
2006 – 2009
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| Keywords | 特性ばらつき / しきい値電圧 / SOI / SRAM |
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| Research Abstract |
Random variability has been studied by measurements and simulation. It has been clarified that SOI MOSFETs with very thin buried oxide is less sensitive to random dopant fluctuations. A new method of self-suppression of variability after chip fabrication has been proposed and its validity has been demonstrated by simulation.
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