Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system

2009 Fiscal Year Final Research Report

• Project/Area Number: 18063012
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Nagoya University
• Principal Investigator: ZAIMA Shigeaki Nagoya University, 大学院・工学研究科, 教授 (70158947)
• Co-Investigator(Kenkyū-buntansha): OGAWA Masaki 名古屋大学, エコトピア科学研究所, 教授 (10377773) ; SAKAI Akira 大阪大学, 大学院・基礎工学研究科, 教授 (20314031) ; WATANABE Heiji 大阪大学, 大学院・工学研究科, 教授 (90379115) ; SAKASHITA Mitsuo 名古屋大学, 大学院・工学研究科, 助教 (30225792) ; KONDO Hiroki 名古屋大学, 大学院・工学研究科, 准教授 (50345930) ; NAKATSUKA Osamu 名古屋大学, 大学院・工学研究科, 講師 (20334998)
• Project Period (FY): 2006 – 2009
• Keywords: 半導体超微細化 / デバイス設計・製造プロセス / ナノ材料 / 半導体物性 / 表面・界面物性

Research Abstract

We have investigated "high mobility tensile-strained Ge channel", "high dielectric and low leakage gate insulators/Ge stack", "Ge nitridation", and "metal alloy gate electrodes with work function controllability and high uniformity" for realization of novel group-IV semiconductors MOSFETs in the post-scaling generation. We have achieved finding new materials, establishing elemental technology, and developing integration technology of each material.

Research Products

• [Journal Article] Formation Processes of Ge_3N_4 Films by Radical Nitridation and Their Electrical Properties (2010)
  • Author(s): K. Kato, H. Kondo, M. Sakashita, S. Zaima
  • Journal Title: Thin Solid Films 518(6) Pages: S226-S230
• [Journal Article] Low temperature growth of Ge_<1-x>Sn_x buffer layers for tensile-strained Ge layers (2010)
  • Author(s): Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
  • Journal Title: Thin Solid Films 518(6) Pages: S2-S5
• [Journal Article] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing (2010)
  • Author(s): T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata
  • Journal Title: Thin Solid Films 518(6) Pages: S147-S150
• [Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor (2010)
  • Author(s): H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
  • Journal Title: Appl. Phys. Lett. 96 Pages: 012105
• [Journal Article] Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes (2009)
  • Author(s): H. Kondo, K. Furumai, M. Sakashita, A. Sakai, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 48 Pages: 04C012-1-5
• [Journal Article] Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge_<1-x>Sn_x Buffer Layers for Tensile-Strained Ge Layers (2009)
  • Author(s): Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 48 Pages: 04C130-1-4
• [Journal Article] Effects of Atomic Layer Deposition-Al_2O_3 Interface Layers on Interfacial Properties of Ge Metal-Oxide-Semiconductor Capacitors (2009)
  • Author(s): R. Kato, S. Kyogoku, M. Sakashita, H. Kondo, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 48 Pages: 05DA04-1-4
• [Journal Article] Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf-Si-N Gate Electrodes for Metal-Oxide-Semiconductor Field-Effect Transistors (2009)
  • Author(s): K. Miyamoto, K. Furumai, B.E. Urban, H. Kondo, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 48 Pages: 045505-1-4
• [Journal Article] Microstructures in directly bonded Sisubstrates (2009)
  • Author(s): Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
  • Journal Title: Solid-State Electronics 53 Pages: 837-840
• [Journal Article] Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si_<1-x>Ge_x Structures on Si(001) Substrates (2009)
  • Author(s): T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, S. Zaima
  • Journal Title: Solid-State Electronics 53(11) Pages: 1198-1201
• [Journal Article] Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO_2/Ge metal-oxide-semiconductor devices (2009)
  • Author(s): T. Hosoi, K. Kutsuki, G. Okamoto, M. Saito, T. Shimura, H. Watanabe
  • Journal Title: Appl. Phys. Lett. 94 Pages: 202112-1-3
• [Journal Article] Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100) (2009)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
  • Journal Title: Appl. Phys. Lett. 95 Pages: 022102-1-3
• [Journal Article] First-principles study to obtain evidence of low interface defect density at Ge/GeO_2 interfaces (2009)
  • Author(s): S. Saito, T. Hosoi, H. Watanabe, T. Ono
  • Journal Title: Appl. Phys. Lett. 95 Pages: 011908-1-3
• [Journal Article] Fabrication of local Ge-on-Insulator structures by lateral liquid-phase epitaxy: effect of controlling interface energy between Ge and insulators on lateral epitaxial growth (2009)
  • Author(s): T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe
  • Journal Title: Appl. Phys. Express 2 Pages: 066502-1-3
• [Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors (2008)
  • Author(s): K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 47(4) Pages: 2420-2424
• [Journal Article] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System (2008)
  • Author(s): O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, S. Zaima
  • Journal Title: Jpn. J. Appl. Phys. 47(4) Pages: 2402-2406
• [Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method (2008)
  • Author(s): S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, A. Sakai
  • Journal Title: Appl. Phys. Lett. 92 Pages: 231916-1-3
• [Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications (2008)
  • Author(s): S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa
  • Journal Title: Thin Solid Films 517(1) Pages: 80-83
• [Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates (2008)
  • Author(s): S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
  • Journal Title: Thin Solid Films 517(1) Pages: 159-162
• [Journal Article] Characterization of bonding structures of directly bonded hybrid crystal orientation substrates (2008)
  • Author(s): E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima
  • Journal Title: Thin Solid Films 517(1) Pages: 323-326
• [Journal Article] Characteristics of pure Ge_3N_4 dielectric layers formed by high-density plasma nitridation (2008)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
  • Journal Title: Japanese J. Appl. Phys. 47 Pages: 2415-2419
• [Journal Article] Application of synchrotron x-ray diffraction methods to gate stacks of advanced MOS devices (2008)
  • Author(s): T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe
  • Journal Title: ECS Transactions 13
• [Journal Article] Observation of crystalline imperfection in supercritical thickness strained silicon on insulator wafers by synchrotron x-ray topography (2008)
  • Author(s): T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, H. Watanabe
  • Journal Title: ECS Transactions 16 Pages: 539-543
• [Journal Article] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrode (2007)
  • Author(s): D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
  • Journal Title: Jpn. J. Appl. phys. 46(4B) Pages: 1865-1869
• [Journal Article] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers grown on various types of substrates (2007)
  • Author(s): S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
  • Journal Title: Semicond. Sci. Technol. 22(1) Pages: S231-S235
• [Journal Article] Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation (2007)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
  • Journal Title: Applied Physics Letters 91 Pages: 163501-1-3
• [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers (2006)
  • Author(s): T. Shimura, M. Shimizu, S. Horiuchi, H. Watanabe, K. Yasutake, M. Umeno
  • Journal Title: Appl. Phys. Lett. 89 Pages: 111923-1-3
• [Presentation] Crystalline Orientation Dependence of Electrical Properties on Mn Germanide/Ge(111) and (001) Schottky Contacts (2010)
  • Author(s): T. Nishimura, O. Nakatsuka, S. Zaima
  • Organizer: Materials for Advanced Metallization
  • Place of Presentation: Mechelen, Belgium
  • Year and Date: 20100307-20100310
• [Presentation] Potential of Ge_<1-x>Sn_x alloys as high mobility channel materials and stressors (2010)
  • Author(s): Invited: S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
  • Organizer: 5th International WorkShop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20100129-20100130
• [Presentation] Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films (2009)
  • Author(s): K. Miyamoto, H. Kondo, S. Zaima
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20091007-20091009
• [Presentation] Formation of GeSn Buffer Layers for High-Speed Strained-Ge Channel MOSFETs (2009)
  • Author(s): Invited: S. Zaima
  • Organizer: The 1st International Workshop on Si based nano-electronics and -photonics
  • Place of Presentation: Vigo, Spain
  • Year and Date: 20090920-20090923
• [Presentation] Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelectron Spectroscopy (2009)
  • Author(s): Invited: S. Zaima, O. Nakatsuka, T. Hattori
  • Organizer: International Workshop for New Opportunities in Hard X-ray Photoelectron Spectroscopy
  • Place of Presentation: New York, USA
  • Year and Date: 20090520-20090522
• [Presentation] Formation and characterization of tensile-strained Ge layers on Ge_<1-x>Sn_x buffer layers (2009)
  • Author(s): Invited: S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai
  • Organizer: The 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 20090517-20090522
• [Presentation] Low Temperature Growth of Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers (2009)
  • Author(s): Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
  • Organizer: The 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 20090517-20090522
• [Presentation] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing (2009)
  • Author(s): T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata
  • Organizer: The 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 20090517-20090522
• [Presentation] Formation Processes of Ge_3N_4 films by Radical Nitridation and their Electrical Properties (2009)
  • Author(s): K. Kato, H. Kondo, S. Zaima
  • Organizer: The 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 20090517-20090522
• [Presentation] New insights into flatband voltage shift and minority carrier generation in GeO_2/Ge MOS devices (2009)
  • Author(s): T. Hosoi, M. Saito, I. Hideshima, G. Okamoto, K. Kutsuki, T. Shimura, S. Ogawa, T. Yamamoto, H. Watanabe
  • Organizer: 40^<th> IEEE Semiconductor Interface Specialist Conference
  • Place of Presentation: Arlington, USA
  • Year and Date: 2009-12-03
• [Presentation] Impact of plasma nitridation of physical and electrical properties of ultrathin thermal oxides on Ge(100) (2009)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
  • Organizer: MRS Fall Meeting, A7. 2
  • Place of Presentation: Boston, USA
  • Year and Date: 2009-12-01
• [Presentation] Fabrication of single-crystal local germanium-on-insulator structures by lateral liquid-phase epitaxy (2009)
  • Author(s): T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe
  • Organizer: MRS Fall Meeting, A5. 1
  • Place of Presentation: Boston
  • Year and Date: 2009-11-30
• [Presentation] Improved electrical properties of Ge_3N_4 interfaces by fluorine ion implantation (2008)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe
  • Organizer: IEEE Semiconductor Interface Specialists Conference
  • Place of Presentation: San Diego, USA
  • Year and Date: 20081111-20081113
• [Presentation] Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates (2008)
  • Author(s): Invited: E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, S. Zaima
  • Organizer: The 5th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Hawaii, USA
  • Year and Date: 20081110-20081114
• [Presentation] Formation of Ge_3N_4/Ge structures using nitrogen radicals and their thermal stability (2008)
  • Author(s): S. Oda, H. Kondo, M. Ogawa, S. Zaima
  • Organizer: 214th ECS meeting
  • Place of Presentation: Honolulu, USA
  • Year and Date: 20081000
• [Presentation] Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor (2008)
  • Author(s): H. Kondo, S. Sakurai, A. Sakai, M. Ogawa, S. Zaima
  • Organizer: 2008 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20080900
• [Presentation] Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers (2008)
  • Author(s): Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
  • Organizer: 2008 International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20080900
• [Presentation] Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates (2008)
  • Author(s): E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, K. Omote
  • Organizer: The fourth International SiGe Technology and Device Meeting
  • Place of Presentation: HsinChu, Taiwan
  • Year and Date: 20080500
• [Presentation] Microstructures in Directly Bonded Si Substrates (2008)
  • Author(s): A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda
  • Organizer: The fourth International SiGe Technology and Device Meeting
  • Place of Presentation: HsinChu, Taiwan
  • Year and Date: 20080500
• [Presentation] Application of synchrotron x-ray diffraction methods to gate stacks of advanced MOS devices (2008)
  • Author(s): Invited: T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe
  • Organizer: 213^<th> ECS Meeting
  • Place of Presentation: Phoenix, AZ, USA
  • Year and Date: 20080500
• [Presentation] Thermal and humidity stability of Ge_3N_4 thin layers fabricated by high-density plasma nitridation (2007)
  • Author(s): K. Kutsuki, G. Okamoto, T. Hosoi, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe
  • Organizer: International Semiconductor Device Research Symposium
  • Place of Presentation: Maryland, USA
  • Year and Date: 20071212-20071214
• [Presentation] Defect Control for Ge/Si and Ge_<1-x>Sn_x/Ge/Si Heterostructures (2007)
  • Author(s): Invited: A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima
  • Organizer: Fifth International Symposium on Control of Semiconductor Interfaces
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20071112-20071114
• [Presentation] Growth and Characterization of Tensile- Strained Ge Layers on Strain Relaxed Ge_<1-x>Sn_x Buffer Layers (2007)
  • Author(s): Invited: O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima
  • Organizer: The 3nd international workshop on new group IV semiconductor nanoelectronics
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20071108-20071109
• [Presentation] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors (2007)
  • Author(s): K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
  • Organizer: 2007 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20070918-20070921
• [Presentation] Surface Treatment of Ge(001) Surface by Radical Nitridation (2007)
  • Author(s): H. Kondo, M. Fujita, A. Sakai, M. Ogawa, S. Zaima
  • Organizer: 2007 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20070918-20070921
• [Presentation] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates (2007)
  • Author(s): S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
  • Year and Date: 20070520-20070525
• [Presentation] Strain and dislocations in group IV semiconductor heterostructures (2007)
  • Author(s): Invited: A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
  • Organizer: Materials Research Society 2007 Spring Meeting
  • Place of Presentation: San Francisco, USA
  • Year and Date: 20070409-20070413
• [Presentation] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrodes (2006)
  • Author(s): D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
  • Organizer: 2006 International Conference on Solid State Devices and Materials
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 20060912-20060915
• [Presentation] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers on virtual Ge(001) substrates (2006)
  • Author(s): S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
  • Organizer: The Third International SiGe Technology and Device Meeting
  • Place of Presentation: Princeton, USA
  • Year and Date: 20060500
• [Remarks]
  • URL: http://alice.xtal.nagoya-u.ac.jp/zaimalab/
• [Patent(Industrial Property Rights)] 多層膜構造体の形成方法 (2007)
  • Inventor(s): 中塚理、酒井朗、小川正毅、財満鎭明、近藤博基、湯川勝規、水谷卓也
  • Industrial Property Rights Holder: 国立大学法人名古屋大学
  • Industrial Property Number: 特許・2007-122891・2009-272504
  • Filing Date: 20070500
• [Patent(Industrial Property Rights)] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体 (2007)
  • Inventor(s): 竹内正太郎, 酒井朗, 中塚理, 小川正毅, 財満鎭明
  • Industrial Property Rights Holder: 国立大学法人名古屋大学
  • Industrial Property Number: 特許・2007-132189・2008-288395
  • Filing Date: 2007-05-17