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2009 Fiscal Year Final Research Report

Fluctuations in Interface Properties and Noise in Nano-Scaled Devices

Research Project

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Project/Area Number 18063016
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShimane University

Principal Investigator

TSUCHIYA Toshiaki  Shimane University, 総合理工学部, 教授 (20304248)

Co-Investigator(Renkei-kenkyūsha) SAKURABA Masao  東北大学, 電気通信研究所, 准教授 (30271993)
MOGAMI Tohru  , (株)半導体先端テクノロジーズ
Research Collaborator TAKEHIRO Shinobu  東北大学, 電気通信研究所, 助手
MISHIMA Seiji  島根大学, 総合理工学研究科, 博士前期課程
YOSHIDA Keiichi  島根大学, 総合理工学研究科, 博士前期課程
MORI Yuki  島根大学, 総合理工学研究科, 博士前期課程
MORIMURA Yuta  島根大学, 総合理工学研究科, 博士前期課程
Project Period (FY) 2006 – 2009
Keywordsマイクロ・ナノデバイス / 半導体超微細化 / 電子デバイス・機器 / 表面・界面物性
Research Abstract

We found that charge pumping characteristics in MOSFETs depend on on-time of the gate pulse used in the measurements, and proposed an ultimate method to evaluate the fluctuation in the properties of individual interface traps. Using the method, we successfully observed the fluctuations in the number and carrier capture rate of interface traps in nanoscale MOSFETs. These results will greatly influence the advancement of the research on noise in MOS devices including clarification of the RTN mechanism.

  • Research Products

    (20 results)

All 2010 2009 2008 2007 2006 Other

All Journal Article (7 results) Presentation (12 results) Remarks (1 results)

  • [Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009

    • Author(s)
      土屋敏章
    • Journal Title

      応用物理 第78巻,第9号

      Pages: 868-872

  • [Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008

    • Author(s)
      S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
    • Journal Title

      Thin Solid Films vol.517,no.1

      Pages: 346-349

  • [Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007

    • Author(s)
      T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
    • Journal Title

      Jpn. J. Appl. Phys. vol.46,no.8A

      Pages: 5015-5020

  • [Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006

    • Author(s)
      竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9

      Pages: 1079-1082

  • [Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006

    • Author(s)
      土屋敏章, 櫻庭政夫, 室田淳一
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9

      Pages: 1101-1106

  • [Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Journal Title

      Thin Solid Films Vol.508,Issues1-2

      Pages: 326-328

  • [Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
    • Journal Title

      Jpn. J. Appl. Phys. (印刷中)

  • [Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2010

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami
    • Organizer
      4th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Year and Date
      20100129-20100130
  • [Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
    • Organizer
      Proc. of the 39th European Solid-State Device Research Conference
    • Place of Presentation
      Athens, Greece
    • Year and Date
      20090914-20090918
  • [Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
    • Place of Presentation
      San Diego, USA
    • Year and Date
      20081211-20081213
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      4th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20080925-20080927
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      4th International SiGe Technology and Device Meeting
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      20080511-20080514
  • [Presentation] Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating2007

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      3rd International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Year and Date
      20071108-20071109
  • [Presentation] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2007

    • Author(s)
      S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
    • Place of Presentation
      Marseille, France
    • Year and Date
      20070520-20070525
  • [Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
    • Place of Presentation
      Marseille, France
    • Year and Date
      20070520-20070525
  • [Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006

    • Author(s)
      T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
    • Place of Presentation
      San Diego, USA
    • Year and Date
      20061207-20061209
  • [Presentation] Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain2006

    • Author(s)
      S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, J. Murota
    • Organizer
      2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20061002-20061003
  • [Presentation] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20061002-20061003
  • [Presentation] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
    • Place of Presentation
      Tohoku Univ., Sendai, Japan
    • Year and Date
      20060703-20060705
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

URL: 

Published: 2011-06-18   Modified: 2016-04-21  

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