2007 Fiscal Year Final Research Report Summary
High-Efficiency Nitride-based Power Devices in the Next Generation
| Project/Area Number |
18206036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Meijo University |
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Principal Investigator |
AMANO Hiroshi Meijo University, Department of Materials Science and Engineering, Professor (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
IWAYA Motoaki Meijo University, Department of Materials Science and Engineering, Associate Professor (40367735)
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| Project Period (FY) |
2006 – 2007
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| Keywords | p-GaN gate / Normally off FET / group III nitride / High power switching / High breakdown voltage / Junction hetero FET |
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| Research Abstract |
Objective of this program is to prove that the group III nitride is one of the most suitable materials for the fabrication of high power FET in the next generation. In FY2006, 1. Reduction of on resistance and improvement of the mutual conductance by surface passivation, 2. Small sub-threshold swing and low power loss in inverter circuit, 3. Controllability of the threshold voltage by changing barrier composition and thickness, and 4. Difference of the mobility underneath the gate-source and the gate were clarified. In order to realize high power devices, AN substrate is very promising because of the small lattice mismatch and the extremely high resistance. Therefore, in this program, 5. Growth of AIN substrate by sublimation on the 6H-SiC substrate, and 6. Growth of high quality AIN template on a sapphire substrate by high temperature MOVPE was conducted. Several papers were published for this issue.
In FY2007, relationship between thickness of SiN passivation film and the maximum drain current was found. By optimizing the SIN thickness to be 5 nm, the following performance can be successfully observed in the normally off JHFET; Maximum drain current density: 1.58×10^<-1> [A/mm], leakage current: 1.45×10^<-8> [A/mm], on/off ratio: higher than 7 orders of magnitude, sub-threshold swing: 90 [mV/dec.], on resistance: 3.4 [mΩcm^2]. In addition, breakdown voltage was as high as 325 V, which is sufficient for inverter circuits for small size air conditioner.
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[Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
Author(s)
M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Journal of Crystal Growth 300
Pages: 136-140
Description
「研究成果報告書概要(和文)」より
Peer Reviewed
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[Journal Article] Epitaxial lateral overgrowth of AIN on trench-patterned AIN layers2007
Author(s)
M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Journal of Crystal Growth 298
Pages: 257-260
Description
「研究成果報告書概要(和文)」より
Peer Reviewed
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[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
Author(s)
M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
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Journal Title
Journal of Crystal Growth 300
Pages: 136-140
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Epitaxial lateral overgrowth of A1N on trench-patterned AlN layers2007
Author(s)
M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada,. K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro T. Takagi, A. Bandoh
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Journal Title
Journal of Crystal Growth 298
Pages: 257-260
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AIN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
Author(s)
M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
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Journal Title
Japanese Journal of Applied Physics 45
Pages: 8639-8643
Description
「研究成果報告書概要(和文)」より
Peer Reviewed
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[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
Author(s)
M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
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Journal Title
Japanese Journal of Applied Physics 45
Pages: 8639-8643
Description
「研究成果報告書概要(欧文)」より
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