Quasi-ballistic transport modeling of emerging MOSFETs with new channel materials and new structures

2008 Fiscal Year Self-evaluation Report

• Project/Area Number: 18560334
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kobe University
• Principal Investigator: TSUCHIYA Hideaki Kobe University, 大学院・工学研究科, 准教授 (80252790)
• Project Period (FY): 2006 – 2009
• Keywords: 電子デバイス・集積回路

Research Abstract

本研究では、高度情報処理社会を支える半導体集積回路を構成するMOSFETの性能向上を実現することを目的として、新材料及び新構造を導入した新しいMOSFETの研究を行っている。

Research Products

• [Journal Article] Quantum Transport Simulation of Silicon Nanowire Transistors Based on DirectSolution Approach of the Wigner Transport Equation, to be published in IEEE Trans. On (2009)
  • Author(s): Y.Yamada, H.Tsuchiya and M.Ogawa
  • Journal Title: Electron Devices Vol.56, No.7
  • Peer Reviewed
• [Journal Article] Strain Effects on Electronic Bandstructures in Nanoscaled Silicon : From Bulk to Nanowire (2009)
  • Author(s): T.Maegawa, T.Yamauchi, T.Hara, H.Tsuchiya and M. Ogawa
  • Journal Title: IEEE Trans. on Electron Devices on Electron Devices Vol.56, No.4, Pages: 553-559
  • Peer Reviewed
• [Journal Article] Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs (2008)
  • Author(s): H.Tsuchiya and S.Takagi
  • Journal Title: IEEE Trans. On Electron Devices Vol.55, No.9 Pages: 2397-2402
  • Peer Reviewed
• [Journal Article] Atomistic Study on Electronic Properties of Nanoscale SOI Channels (2008)
  • Author(s): T.Hara, Y.Yamada, T.Maegawa and H.Tsuchiya
  • Journal Title: J.Physics : Conference Series, Physics : Conference Series Vol.109,012012
  • Peer Reviewed
• [Journal Article] Drive Current of Ultrathin Ge-on-Insulatorn-Channel MOSFETs (2008)
  • Author(s): Y.Azuma, T.Mori and H.Tsuchiya
  • Journal Title: Phys.Stat.Sol. (c) Vol.5, No.9 Pages: 3153-3155
  • Peer Reviewed
• [Journal Article] Comparative Study on Drive Currentof III-V Semiconductor, Ge and Si Channeln-MOSFETs based on Quantum-Corrected Monte Carlo Simulation (2008)
  • Author(s): T Mori, Y.Azuma, H.Tsuchiya and T.Miyoshi
  • Journal Title: IEEE Trans. On Nanotechnology Nanotechnology Vol.7, No.2, Pages: 237-241
  • Peer Reviewed
• [Journal Article] A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs, IEEE Trans (2006)
  • Author(s): H.Tsuchiya, K.Fujii, T.Mori and T.Miyoshi
  • Journal Title: on Electron Devices, Vol.53, No.12, Pages: 2965-2971
  • Peer Reviewed
• [Presentation] 高移動度チャネルMOS トランジスタの性能予測シミュレ-ション(招待講演) (2009)
  • Author(s): 土屋英昭, 前中章宏, 森隆志, 東祐介
  • Organizer: 応用物理学会ゲ-トスタック研究会-材料・プロセス・評価の物理-
  • Year and Date: 2009-01-23
• [Presentation] Three-Dimensional Quantum TransportSimulation of Si-Nanowire Transistors Basedon Wigner Function Model (2008)
  • Author(s): Y.Yamada and H.Tsuchiya
  • Organizer: Extended Abstracts of the 2008 International Conferenceon Simulation of Semiconductor Processes and Devices (SISPAD)
  • Year and Date: 20080909-11
• [Presentation] シリコンナノワイヤトランジスタの三次元量子輸送シミュレ-ション (2008)
  • Author(s): 山田吉宏, 土屋英昭, 小川真人,
  • Organizer: 応用物理学会分科会シリコンテクノロジ-
  • Place of Presentation: 機械振興会館(東京)
  • Year and Date: 2008-11-14
• [Presentation] 第一原理計算によるひずみシリコンナノ構造チャネルの電子状態解析 (2008)
  • Author(s): 前川忠史, 山内恒毅, 原孟史, 土屋英昭, 小川真人
  • Organizer: 応用物理学会分科会 シリコンテクノロジ-
  • Place of Presentation: 機械振興会館(東京)
  • Year and Date: 2008-11-14
• [Presentation] Influences of Elastic and Inelastic Scatterings on Ballistic Transport in MOSFETs (2007)
  • Author(s): H.Tsuchiya and S.Takagi
  • Organizer: Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM07)
  • Year and Date: 20070919-21
• [Presentation] On the Performance Limits of Emerging Nano-MOS Transistors : ASimulation Study (invited) (2007)
  • Author(s): H.Tsuchiya, K.Fujii, T.Mori, Y.Azuma, K.Okuda and T.Miyoshi
  • Organizer: Proceedings of 2007 7th IEEE Int'l Conf. on Nanotechnology (IEEE-NANO2007)
  • Place of Presentation: Hong Kong
  • Year and Date: 20070802-05
• [Book] ナノエレクトロニクスの基礎 (2007)
  • Author(s): 三好旦六、小川真人、土屋英昭
  • Total Pages: 261
  • Publisher: 培風館