Development of high position resolution and radiation tolerant pixel detector for future collider experiment

2020 Fiscal Year Final Research Report

• Project/Area Number: 18K13571
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
• Research Institution: Tokyo Metropolitan College of Industrial Technology (2019-2020); High Energy Accelerator Research Organization (2018)
• Principal Investigator: Yamada Miho 東京都立産業技術高等専門学校, ものづくり工学科, 助教 (90714668)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Keywords: ピクセル検出器 / モノリシック型 / SOI / ILC / 放射線耐性 / ヒッグス / 三次元積層化 / CMOS

Outline of Final Research Achievements

High position resolution monolithic pixel detector using Silicon-on-Insulator(SOI) technology have developed for International Liner Collider Experiment. 3 μm of position resolution is required for precise measurement of Higgs boson property.Prototype sensor, SOFIST, have achieved 1.4 μm of position resolution with 3D stacking technology of SOI chips.Double-SOI wafer which has middle Si layer in buried oxide layer and Fowler-Nordheim tunneling performed compensation of radiation damage (1kGy/year at ILC) of SOI wafer and characteristics of transistors of signal readout circuit.

Free Research Field

素粒子実験

Academic Significance and Societal Importance of the Research Achievements

高エネルギー加速器実験で使用可能なモノリシック型CMOSセンサーとして，1.4μmの位置分解能は世界最高レベルである．また，金マイクロバンプを用いたSOIチップの三次元積層化技術の確立により，20μm角程度の領域内にアナログ・デジタル混在の高機能信号処理回路を実装可能とした．さらに，放射線損傷補償機構を備えたCMOSセンサーは加速器実験のみならず，天文学や放射光施設，医療機器など，放射線を扱うデバイスには広く有用である．