2009 Fiscal Year Final Research Report
Development and application of totally low-temperature semiconductor process using atmospheric-pressure plasma
| Project/Area Number |
19206018
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
YASUTAKE Kiyoshi Osaka University, 工学研究科, 教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIUCHI Hiroaki 大阪大学, 大学院・工学研究科, 准教授 (10233660)
OHMI Hiromasa 大阪大学, 大学院・工学研究科, 助教 (00335382)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 大気圧プラズマ / 半導体プロセス / エピタキシャル / 薄膜成長 / プラズマ酸化 / 機能材料 |
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| Research Abstract |
We have developed constituent technologies to realize a totally low-temperature semiconductor process by using atmospheric-pressure plasma ; namely in-situ doped Si epitaxial growth at 570℃ by atmospheric-pressure plasma CVD and SiO_2 film formation by atmospheric-pressure plasma oxidation at 400℃. From the electrical measurements, it has been revealed that the prepared Si and SiO_2 films have high qualities for device application.
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