2010 Fiscal Year Final Research Report
A study on low-power, high-density integrated circuits for flexible organic FeRAMs
| Project/Area Number |
19206039
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ISHIWARA Hiroshi Tokyo Institute of Technology, 大学院・総合理工学研究科, 教授 (60016657)
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| Co-Investigator(Kenkyū-buntansha) |
OHMI Shunーichiro 東京工業大学, 大学院・総合理工学研究科, 准教授 (30282859)
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| Co-Investigator(Renkei-kenkyūsha) |
FUJISAKI Yoshihisa 株式会社日立製作所(研究開発本部), 中央研究所ULSI研究部, 主任研究員 (00451013)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 電子デバイス / 集積回路 / 不揮発性メモリ |
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| Research Abstract |
In this research, we investigated flexible nonvolatile memories utilizing organic FETs with pentacene as a semiconductor and P(VDF/TrFE) as a gate ferroelectric. In order to realize organic ferroelectric gate FETs, fabrication processes such as contact formation by dry etching and P(VDF/TrFE) thin film formations on the pentacene thin films were examined. By using the optimized process conditions, top-gate type organic FETs with P(VDF/TrFE) gate insulator were successfully fabricated on glass and flexible substrates with ferroelectric memory characteristics.
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Research Products
(31 results)
