2009 Fiscal Year Final Research Report
Non-equilibrium phases appearing on semiconductor surfaces at low temperatures induced by electronic excitation
| Project/Area Number |
19340083
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Kyushu University |
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Principal Investigator |
TOCHIHARA Hiroshi Kyushu University, 大学院・総合理工学研究院, 教授 (80080472)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Toshio 東京大学, 物性研究所, 教授 (20107395)
SHIRASAWA Tetsuroh 東京大学, 物性研究所, 助教 (80451889)
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| Project Period (FY) |
2007 – 2009
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| Keywords | Ge(111)表面 / Sn吸着 / 表面構造 / 半導体表面 / 電子線照射効果 / 低速電子回折 / 相転移 / 低温 |
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| Research Abstract |
Just before starting the present study (2005), we had found that the structure of clean Si(001)c(4×2) surfaces undergoes the disordering induced by the irradiation of low-energy electron beam only below about 50K. In this study we have succeeded to find another example of electron-beam-irradiation induced disordering of the surface structure on the Ge(111)-Sn adsorption system only below 40K. We have clarified the conditions for the occurrence of this phenomenon, and proposed its microscopic mechanism.
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