2009 Fiscal Year Final Research Report
Group IV Semiconductor Quantum Device Fabrication for Room Temperature Operation
| Project/Area Number |
19360002
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
SAKURABA Masao Tohoku University, 電気通信研究所, 准教授 (30271993)
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| Co-Investigator(Kenkyū-buntansha) |
MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
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| Project Period (FY) |
2007 – 2009
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| Keywords | ヘテロ構造 / IV族半導体 / 量子デバイス / 室温動作 / エピタキシャル成長 |
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| Research Abstract |
Low-temperature SiH_4 exposure or high Si growth rate by use of Si_2H_6 gas for Si cap layer formation on Si_<1-x>Ge_x effectively suppress interface roughness in high-Ge-fraction Si/Si_<1-x>Ge_x heterostructures. By utilizing the method into resonant tunneling diode fabrication process, negative differential conductance characteristics at room temperature is demonstrated.
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