2009 Fiscal Year Final Research Report
Fabrication and studies on electronic property and reactivity for monatomic layer of noble metals on single-crystal oxide films
| Project/Area Number |
19540331
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MURATA Yoshitada The University of Tokyo, 名誉教授 (10080467)
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| Co-Investigator(Renkei-kenkyūsha) |
OKANO Tatsuo 東京大学, 生産技術研究所, 教授 (60011219)
FUKUTANI Katsuyuki 東京大学, 生産技術研究所, 教授 (10228900)
MATSUMOTO Masuaki 東京大学, 生産技術研究所, 助教 (40251459)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 表面・界面物性 / 物性実験 / 金属物性 / 複合材料・物性 |
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| Research Abstract |
Very thin single-crystal oxide layer can be formed on transition metal surfaces. When this layer is used as a substrate, a monatomic layer of noble metal such as platinum and gold is fabricated. Electronic property and reactivity will be studied on this two-dimensional noble metal. Single-crystal SiO_2 film on the (111) surface of Ni was focused in the present study. Although many troubles have happened, a very high pressure phase of SiO_2 will be produced and is expected to exist in the universe.
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