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2009 Fiscal Year Final Research Report

Development of new barrier materials of compound for ultra-fine copper interconnects

Research Project

  • PDF
Project/Area Number 19560308
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKitami Institute of Technology

Principal Investigator

NOYA Atsushi  Kitami Institute of Technology, 工学部, 教授 (60133807)

Co-Investigator(Kenkyū-buntansha) TAKEYAMA Mayumi   (80236512)
Project Period (FY) 2007 – 2009
Keywords薄膜 / ZrB_2 / 化合物
Research Abstract

We have prepared thin Zr-B films at low temperatures as a new material applicable to an extremely thin barrier against Cu diffusion in Si-ULSI metallization. The sputter-deposited Zr-B films from a composite target mainly consist of ZrB_2 phase with a nanocrystalline texture on SiO_2 and a fiber texture on Cu. The resistivity of the Zr-B films depends on the substrate of SiO_2 or Cu. The constituent ratio of B/Zr is almost 2, though the contaminants of oxygen, nitrogen, and carbon are incorporated in the film. The nanocrystalline structure of the Zr-B film on SiO_2 is stable due to annealing at temperatures up to 500℃ for 30 min. We applied the 3-nm thick Zr-B film to a diffusion barrier between Cu and SiO_2, and the stable barrier properties were confirmed. We can demonstrate that the thin Zr-B film is a promising candidate for thin film application to a metallization material in Si-ULSIs.

  • Research Products

    (8 results)

All 2010 2009 2008 2007

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (7 results)

  • [Journal Article] Low temperature deposited Zr-B film applicable to extremely thin barrier for copper interconnect2009

    • Author(s)
      M. B. Takeyama, A. Noya, Y. Nakadai, S. Kambara, M. Hatanaka, Y. Hayasaka, E. Aoyagi, H. Machida, K. Masu
    • Journal Title

      Applied Surface Science 256

      Pages: 1222-1226

    • Peer Reviewed
  • [Presentation] 低温作製されたZrBx薄膜のCu配線への適用2010

    • Author(s)
      武山真弓, 佐藤勝, 野矢厚
    • Organizer
      2010春季応用物理学会関係連合講演会
    • Place of Presentation
      神奈川
    • Year and Date
      20100300
  • [Presentation] ZrBx薄膜の特性評価とCu多層配線への応用2009

    • Author(s)
      武山真弓, 佐藤勝, 早坂祐一郎, 青柳英二, 野矢厚
    • Organizer
      電子情報通信学会電子部品・材料研究会、CPM2009-43
    • Year and Date
      20090800
  • [Presentation] 低温作製されたZrBx薄膜の特性評価2009

    • Author(s)
      武山真弓, 宮地一成, 木嶋雄介, 佐藤勝, 野矢厚
    • Organizer
      44回応用物理学会北海道支部・第5回日本光学会北海道支部合同学術講演会
    • Place of Presentation
      函館
    • Year and Date
      20090100
  • [Presentation] Low temperature deposited ZrB_2 thin film applicable to extremely thin barrier against copper interconnect2008

    • Author(s)
      M. B. Takeyama, A. Noya, Y. Nakadai, S. Kambara, M. Hatanaka, E. Aoyagi, H. Machida, K. Masu
    • Organizer
      40^<th> Vacuum and Surface Science Conference of Asia and Australia
    • Place of Presentation
      Matsue
    • Year and Date
      20081000
  • [Presentation] ZrBx薄膜のキャラクタリゼーション2008

    • Author(s)
      佐藤勝, 木嶋雄介, 宮地一成, 武山真弓, 野矢厚
    • Organizer
      電気・情報関係学会北海道支部連合大会
    • Place of Presentation
      札幌
    • Year and Date
      20081000
  • [Presentation] ZrB_2薄膜のキャラクタリゼーションとCu/SiO_2間のバリヤ特性2007

    • Author(s)
      武山真弓, 中台保夫, 神原正三, 畠中正信, 野矢厚
    • Organizer
      電子情報通信学会電子部品・材料研究会、信学技報CPM-2007-111
    • Place of Presentation
      長岡
    • Year and Date
      20071100
  • [Presentation] Application of ZrB_2 thin film as a diffusion barrier in Cu interconnects2007

    • Author(s)
      M.B.Takeyama, Y.Nakadai, S.Kambara, M.Hatanaka, A.Noya
    • Organizer
      Advanced Metallization Conference 2007
    • Place of Presentation
      Tokyo
    • Year and Date
      20071000

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Published: 2011-06-18   Modified: 2016-04-21  

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