2009 Fiscal Year Final Research Report
Design of Magnetostrictive Susceptibility on Magnetostrictive Thin Film
| Project/Area Number |
19560709
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Structural/Functional materials
|
|---|
| Research Institution | Tokai University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2007 – 2009
|
| Keywords | 磁歪感受率 / 磁歪材料薄膜 / 鉄 / IIIA族元素 / 過飽和固溶体 / イオン / 運動量 / 内部応力 |
|---|
| Research Abstract |
(1) Sm-Fe thin films as giant magnetostrictive materials were prepared by d.c.magnetron sputtering process with mixed Ar-N_2 gas or Ar-CH_4 gas. The maximum value of magnetostrictive susceptibility of prepared thin films was showed at 1.0 vol% of N_2 and 0.5 vol% of CH_4.
(2) Supersaturated solid solution of Fe-In (Fe-In are immiscible system) thin films were prepared by the Ion-Plating process.
(3) The effect of ion bomberdment on the magnetostrictive characteristics of Tb-Fe and Sm-Fe films was quantitatively discussed by an ion bombardment parameter P_i. The ion bombardment parameter P_i could be applied to the design or modify the magnetostrictive susceptibility of films upon the film preparations.
|
