2009 Fiscal Year Final Research Report
Study on Ge surface oxidation processes based on in-situ analysis
| Project/Area Number |
19686037
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Physical properties of metals
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KITA Koji The University of Tokyo, 大学院・工学系研究科, 准教授 (00343145)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 半導体物性 / 初期酸化過程 |
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| Research Abstract |
The GeO desorption from GeO_2 films on Ge is caused by the combination of two reactions occurring at the top and bottom interfaces, respectively, and the desorption rate is described by the diffusion-limited model through the GeO_2 film. It induces the oxygen-deficiency-related defects in the films, which is clearly detected as the increase of sub-gap photo absorption. The significant improvement of electrical characteristics was demonstrated through the suppression of defect generation by the introduction of a cap layer on top of GeO_2 film, or the control of oxygen partial pressure during the thermal treatment. The enhancement of the controllability of the interface properties by the coexisting high-k materials was also demonstrated.
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