2023 Fiscal Year Final Research Report
Scalable Silicon Quantum Dots with Stacked Layered Structures for 3D Integration
| Project/Area Number |
19H00754
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Medium-sized Section 21:Electrical and electronic engineering and related fields
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2019-04-01 – 2023-03-31
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| Keywords | シリコン量子ビット / 量子コンピュータ / シリコン量子ドット / 大規模集積回路 / 単電子トランジスタ / シリコンナノワイヤトランジスタ / 三次元集積化 |
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| Outline of Final Research Achievements |
This study aims at the demonstration of the idea of scalable silicon quantum bits with stacked layers for 3D integration. Combining stacked silicon channel formation process by Si/SiGe epitaxial layers and nanofabirication process by electron beam lithography, the eight-dot structure with four quantum dots in the upper layers and four quantum dots in the lower layers were successfully formed. The fabricated devices were measured at low temperature and the adjacent single electron transistors showed the capacitance coupling effects, suggesting that the proposed stacked structure will be suitable for the 3D integration.
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| Free Research Field |
集積デバイス工学
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| Academic Significance and Societal Importance of the Research Achievements |
実用的な量子コンピュータではエラー訂正等のため極めて多数の量子ビットが必要となり，量子ビットの集積化は今後の大きな課題であった．本研究は，大多数の量子ビット集積化のために量子ビットと3次元集積化に道筋をつけたものであり，学術的意義および社会的意義は大きい．
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