Study on IV-VI semiconductor as electrode application for converting spin current to charge current

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04470
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Yamaguchi University
• Principal Investigator: Asada Hironori 山口大学, 大学院創成科学研究科, 教授 (70201887)
• Co-Investigator(Kenkyū-buntansha): 福間 康裕 九州工業大学, 大学院情報工学研究院, 教授 (90513466) ; 仙波 伸也 宇部工業高等専門学校, 電気工学科, 教授 (40342555)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: IV-VI族半導体 / スピン流 / スピンホール効果

Outline of Final Research Achievements

We have successfully performed epitaxial growth of SnTe on a BaF2(111) substrate. Highly oriented SnTe thin films on both the GGG(100) substrate/YIG film and GGG(100) substrate are obtained. The carrier concentration can be modulated by changing the amount of Te flux. For PbTe, the same results as SnTe are obtained on the BaF2(111) substrate and the GGG(100) substrate. From ferromagnetic resonance measurements, the damping constant of the magnetic film with SnTe is larger than that of the pure magnetic film. It is confirmed that PbTe has the same positive spin Hall effect as Pt from the magnetic field direction dependence of spin-torque ferromagnetic resonance signal.

Free Research Field

磁気工学

Academic Significance and Societal Importance of the Research Achievements

SnTeおよびPbTeについてBaF2、GGG基板上への分子線エピタキシャル法による成長条件の最適化を行った。特に、スピン流を利用するデバイスに有益な小さなダンピング定数を持つ強磁性絶縁体であるイットリウム磁性ガーネット膜で高配向膜を得られたことは特性向上において重要な良好な界面の実現の観点から意義がある。