Fabrication of Direct Bandgap Group-IV Semiconductors by Utilizing Sn Alloying Technique Based on Rapid Melting Growth and Its Electrical Characterization

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K15035
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Oka Hiroshi 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員 (10828007)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: ゲルマニウムスズ / 固相成長 / フラッシュランプアニール / MOSFET

Outline of Final Research Achievements

We demonstrated the high-performance GeSn n-MOSFET based on high-Sn content GeSn layer fabricated by the milli-second flash lamp annealing (FLA). FLA processing enables the solid-phase growth of the amorphous GeSn layer without out-diffusion or segregation of Sn atoms, providing the high-Sn content crystalline GeSn with Sn content over 10%, which far exceeds the solid solubility. Furthermore, a high-quality n+/p junction was successfully formed by using FLA activation annealing. By combining the FLA solid-phase growth and FLA activation annealing, high-Sn content GeSn n-MOSFET with enhanced on-current and improved switching characteristics was achieved, which clearly indicates the advantage of FLA processing for the high-mobility GeSn-CMOS.

Free Research Field

薄膜工学

Academic Significance and Societal Importance of the Research Achievements

GeSn MOSFETのチャネルSn高濃度化を目指す上で、Snの低い固溶限（1%）が大きな技術的課題であった。本研究ではミリ秒の急速加熱が可能なFLAプロセスを用いることで、Snの固溶限界を超えたGeSnチャネルの実現が可能であることを実証した。高移動度CMOSチャネルに向けた薄膜成長手法の新しいアプローチである。